公开(公告)号：US11183243B2

公开(公告)日：2021-11-23

申请号：US16692233

申请日：2019-11-22

Applicant: KIOXIA CORPORATION

Inventor： Weihan Wang ,  Takahiro Shimizu ,  Noboru Shibata

IPC: G11C16/04 ,  G11C11/56 ,  G11C16/08 ,  H03M13/29 ,  G06F11/10 ,  G11C16/34

Abstract: A semiconductor storage device includes a first memory string having first, second, and third memory cells and a first select transistor, a second memory string having fourth, fifth, and sixth memory cells and a second select transistor, a third memory string having seventh, eighth, and ninth memory cells and a third select transistor, a first word line connected to gates of the first, fourth, and seventh memory cells, a second word line connected to gates of the second, fifth, and eighth memory cells, and a third word line connected to gates of the third, sixth, and ninth memory cells. A write operation for writing multi-bit data in the memory cells includes first and second write operations. In the second write operations performed through the first, second, and third word lines, respective ones of the first, fifth, and ninth memory cell are initially selected.