公开(公告)号：US20220181171A1

公开(公告)日：2022-06-09

申请号：US17680396

申请日：2022-02-25

Applicant: KIOXIA CORPORATION

Inventor： Yoshihiro UOZUMI ,  Shinsuke KIMURA ,  Yoshihiro OGAWA ,  Hiroyasu IIMORI ,  Tatsuhiko KOIDE ,  Hideaki HIRABAYASHI ,  Yuji NAGASHIMA

IPC: H01L21/67 ,  G03F7/40 ,  G03F7/16 ,  H01L21/677 ,  H01L21/68

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

公开(公告)号：US20210091024A1

公开(公告)日：2021-03-25

申请号：US17020438

申请日：2020-09-14

Applicant: Kioxia Corporation

Inventor： Yoshihiro UOZUMI

IPC: H01L23/00 ,  H01L21/50 ,  H01L21/78

Abstract: A semiconductor device according to an embodiment includes: a bonding substrate which includes a first chip forming portion having first metal pads provided at a semiconductor substrate and a first circuit connected to the first metal pads, and a second chip forming portion having second metal pads joined to the first metal pads and a second circuit connected to the second metal pads and being bonded to the first chip forming portion; and an insulating film which is filled into a non-bonded region between the first chip forming portion and the second chip forming portion at an outer peripheral portion of the bonding substrate. At least a part of the insulating film contains at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.

公开(公告)号：US20230130044A1

公开(公告)日：2023-04-27

申请号：US18146222

申请日：2022-12-23

Applicant: Kioxia Corporation

Inventor： Yoshihiro UOZUMI

IPC: H01L23/00 ,  H01L21/50 ,  H01L21/78

Abstract: A method for manufacturing a semiconductor device is provided, including: preparing a first chip forming portion having a first semiconductor substrate, first metal pads provided at the substrate and a first circuit electrically connected to at least a part of the pads, and a second chip forming portion having a second semiconductor substrate, second metal pads provided at substrate and a second circuit electrically connected to at least a part of the pads; bonding the first and the second chip forming portions while joining the first and the second pads to form a bonding substrate having a non-bonded region between the first and the second chip forming portions at an outer peripheral portion thereof; and filling an insulating film into the non-bonded region, at least a part of the insulating film containing at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.