公开(公告)号：US11275305B2

公开(公告)日：2022-03-15

申请号：US16804826

申请日：2020-02-28

Applicant: KIOXIA CORPORATION

Inventor： Yukio Oppata ,  Kosuke Takai

IPC: G03F1/76 ,  G03F1/80 ,  G03F1/78 ,  G03F1/58 ,  G03F1/48 ,  G03F1/32

Abstract: A method for manufacturing a photomask includes obtaining a substrate on which a halftone film, a light-shielding film, and a resist film are stacked, irradiating a first region of the resist film at a first dose and a second region of the resist film that surrounds the first region at a second dose greater than the first dose, developing the resist film in the first region to form a mask pattern while leaving the resist film in the second region to form a mask frame pattern, and then patterning the light-shielding film using the mask pattern formed in the resist film.