公开(公告)号：US20210055699A1

公开(公告)日：2021-02-25

申请号：US16872879

申请日：2020-05-12

Applicant: KLA Corporation

Inventor： Ankur A. Agarwal ,  Chad Huard ,  Yiting Zhang ,  Haifeng Pu ,  Xin Li ,  Premkumar Panneerchelvam ,  Fiddle Han ,  Yeurui Chen

IPC: G05B13/04 ,  G01N23/201 ,  G01B11/24 ,  G01B15/04 ,  G01N21/21

Abstract: A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.

公开(公告)号：US11966203B2

公开(公告)日：2024-04-23

申请号：US16872879

申请日：2020-05-12

Applicant: KLA Corporation

Inventor： Ankur Agarwal ,  Chad Huard ,  Yiting Zhang ,  Haifeng Pu ,  Xin Li ,  Premkumar Panneerchelvam ,  Fiddle Han ,  Yeurui Chen

IPC: G05B13/04 ,  G01B11/24 ,  G01B15/04 ,  G01N21/21 ,  G01N23/201 ,  G06F17/14

CPC classification number: G05B13/042 ,  G01B11/24 ,  G01B15/045 ,  G01N21/21 ,  G01N23/201 ,  G01N2223/054 ,  G01N2223/40 ,  G06F17/14

Abstract: A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.