Abstract:
Methods and systems for determining electrically relevant placement of metrology targets using design analysis are disclosed. The method may include: identifying at least one critical design element of an integrated circuit based on a design of the integrated circuit; determining whether the design of the integrated circuit allows for an insertion of a metrology target in a vicinity of the at least one critical design element; and modifying the design of the integrated circuit by inserting a metrology target into the vicinity of the at least one critical design element when the design of the integrated circuit allows for the insertion of the metrology target.
Abstract:
Methods and systems for determining electrically relevant placement of metrology targets using design analysis are disclosed. The method may include: identifying at least one critical design element of an integrated circuit based on a design of the integrated circuit; determining whether the design of the integrated circuit allows for an insertion of a metrology target in a vicinity of the at least one critical design element; and modifying the design of the integrated circuit by inserting a metrology target into the vicinity of the at least one critical design element when the design of the integrated circuit allows for the insertion of the metrology target.
Abstract:
Methods and systems for extracting comprehensive design guidance for in-line process control of wafers are provided. One method includes automatically identifying potential marginalities in a design for a device to be formed on a wafer. The method also includes automatically generating information for the potential marginalities. The automatically generated information is used to set up process control for the wafer.
Abstract:
Methods and systems for determining one or more parameters for electrical testing of a wafer are provided. One method includes determining electrical test paths through a device being formed on a wafer and physical layout components in different layers of the device corresponding to each of the electrical test paths. The method also includes determining one or more parameters of electrical testing for the wafer based on one or more characteristics of the electrical test paths. In addition, the method includes acquiring information for one or more characteristics of a physical version of the wafer. The information is generated by performing an inline process on the physical version of the wafer. The method further includes altering at least one of the one or more parameters of the electrical testing for the wafer based on the acquired information.
Abstract:
Methods and systems for extracting comprehensive design guidance for in-line process control of wafers are provided. One method includes automatically identifying potential marginalities in a design for a device to be formed on a wafer. The method also includes automatically generating information for the potential marginalities. The automatically generated information is used to set up process control for the wafer.
Abstract:
A method and a system for determining one or more parameters for electrical testing of a wafer are provided. One method includes determining electrical test paths through a device being formed on a wafer and physical layout components in different layers of the device corresponding to each of the electrical test paths. The method also includes determining one or more parameters of electrical testing for the wafer based on one or more characteristics of the electrical test paths. In addition, the method includes acquiring information for one or more characteristics of a physical version of the wafer. The information is generated by performing an inline process on the physical version of the wafer. The method further includes altering at least one of the one or more parameters of the electrical testing for the wafer based on the acquired information.