公开(公告)号：US10672588B1

公开(公告)日：2020-06-02

申请号：US16249337

申请日：2019-01-16

Applicant: KLA-TENCOR CORPORATION

Inventor： Hari Pathangi ,  Sivaprrasath Meenakshisundaram ,  Tanay Bansal

IPC: H01J37/22 ,  H01J37/28 ,  G06T7/00

Abstract: A heat map of probable defects in an image can be represented as a matrix of defect probability index corresponding to each pixel. The image may be generated from data received from a detector of a scanning electron microscope or other inspection tools. A number of pixels in the image that exceed a corresponding threshold in the matrix can be quantified.

公开(公告)号：US20200161081A1

公开(公告)日：2020-05-21

申请号：US16249337

申请日：2019-01-16

Applicant: KLA-TENCOR CORPORATION

Inventor： Hari Pathangi ,  Sivaprrasath Meenakshisundaram ,  Tanay Bansal

IPC: H01J37/22 ,  H01J37/28 ,  G06T7/00

Abstract: A heat map of probable defects in an image can be represented as a matrix of defect probability index corresponding to each pixel. The image may be generated from data received from a detector of a scanning electron microscope or other inspection tools. A number of pixels in the image that exceed a corresponding threshold in the matrix can be quantified.

公开(公告)号：US10359706B1

公开(公告)日：2019-07-23

申请号：US16103386

申请日：2018-08-14

Applicant: KLA-Tencor Corporation

Inventor： Hari Pathangi Sriraman ,  Sivaprrasath Meenakshisundaram ,  Arun Lobo

IPC: G03F7/20

Abstract: A sample analysis system includes a scanning electron microscope, an optical and/or eBeam inspection system, and an optical metrology system. The system further includes at least one controller. The controller is configured to receive a first plurality of selected regions of interest of the sample; generate a first critical dimension uniformity map based on a first inspection performed by the scanning electron microscope at the first selected regions of interest; determine a second plurality of selected regions of interest based on the first critical dimension uniformity map; generate a second critical dimension uniformity map based on a second inspection performed by the optical and/or eBeam inspection system at the second selected regions of interest; and determine one or more process tool control parameters based on inspection results and on overlay measurements performed on the sample by the optical metrology system.