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公开(公告)号：US10365225B1
公开(公告)日：2019-07-30
申请号：US15061787
申请日：2016-03-04
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Wei Lu
Abstract: Methods and systems for estimating values of parameters of interest of structures fabricated on a wafer with a signal response metrology (SRM) model trained based on reference measurement data collected from the same wafer are presented herein. In one aspect, the SRM model is an input-output model trained to establish a functional relationship between reference measurements of structures fabricated on the wafer to raw measurement data collected from the same wafer. The raw measurement data collected from the wafer is employed for training the SRM model and for performing measurements using the trained SRM model. In another aspect, the SRM model uses the entire set of raw measurement data collected from a number of measurement sites across the wafer for both training and subsequent measurement at each individual site. In a further aspect, the SRM model is trained and utilized to measure each parameter of interest individually.
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公开(公告)号：US10210606B2
公开(公告)日：2019-02-19
申请号：US14880077
申请日：2015-10-09
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Dzmitry Sanko , Wei Lu , Siddharth Srivastava
IPC: G06T7/00 , G01N21/956 , G03F7/20 , G06T7/33 , H04N5/225
Abstract: Methods and systems for measuring overlay error between structures formed on a substrate by successive lithographic processes are presented herein. Two overlay targets, each having programmed offsets in opposite directions are employed to perform an overlay measurement. Overlay error is measured based on zero order scatterometry signals and scatterometry data is collected from each target at two different azimuth angles. In addition, methods and systems for creating an image-based measurement model based on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The methods and systems for image based measurement described herein are applicable to both metrology and inspection applications.
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公开(公告)号：US20160109375A1
公开(公告)日：2016-04-21
申请号：US14882370
申请日：2015-10-13
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Wei Lu , Andrei V. Shchegrov , Pablo Rovira , Jonathan M. Madsen
IPC: G01N21/88
CPC classification number: G01N21/956 , G01N21/93
Abstract: Methods and systems for measuring metrology targets smaller than the illumination spot size employed to perform the measurement are described herein. Collected measurement signals contaminated with information from structures surrounding the target area are reconstructed to eliminate the contamination. In some examples, measurement signals associated one or more small targets and one or more large targets located in close proximity to one another are used to train a signal reconstruction model. The model is subsequently used to reconstruct measurement signals from other small targets. In some other examples, multiple measurements of a small target at different locations within the target are de-convolved to estimate target area intensity. Reconstructed measurement signals are determined by a convolution of the illumination spot profile and the target area intensity. In a further aspect, the reconstructed signals are used to estimate values of parameters of interest associated with the measured structures.
Abstract translation: 本文描述了用于测量小于用于执行测量的照明点尺寸的度量目标的方法和系统。 重建被污染源自目标区域周围结构信息的收集的测量信号，以消除污染。 在一些示例中，使用与一个或多个小目标相关联的测量信号和彼此靠近彼此靠近的一个或多个大目标来训练信号重建模型。 该模型随后用于重建来自其他小目标的测量信号。 在一些其他示例中，目标内不同位置处的小目标的多次测量被去卷积以估计目标区域强度。 重建的测量信号由照明光斑轮廓和目标区域强度的卷积确定。 在另一方面，重建的信号用于估计与测量结构相关联的感兴趣参数的值。
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Patent Agency Ranking
4.发明申请Signal Response Metrology For Image Based And Scatterometry Overlay Measurements 审中-公开信号响应测量用于基于图像和散射测量的叠加测量公开(公告)号：US20160117847A1
公开(公告)日：2016-04-28
申请号：US14880077
申请日：2015-10-09
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Dzmitry Sanko , Wei Lu , Siddharth Srivastava
CPC classification number: G06T7/001 , G01N21/956 , G03F7/70633 , G06T7/33 , G06T2207/10056 , G06T2207/20081 , G06T2207/30148 , H04N5/2256
Abstract: Methods and systems for measuring overlay error between structures formed on a substrate by successive lithographic processes are presented herein. Two overlay targets, each having programmed offsets in opposite directions are employed to perform an overlay measurement. Overlay error is measured based on zero order scatterometry signals and scatterometry data is collected from each target at two different azimuth angles. In addition, methods and systems for creating an image-based measurement model based on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The methods and systems for image based measurement described herein are applicable to both metrology and inspection applications.
Abstract translation: 本文介绍了通过连续光刻过程测量在基底上形成的结构之间的重叠误差的方法和系统。 采用两个覆盖目标，每个具有相反方向的编程偏移量来执行覆盖测量。 覆盖误差是基于零阶散射测量信号测量的，并且从两个不同方位角的每个目标采集散射测量数据。 另外，提出了基于测量的基于图像的训练数据创建基于图像的测量模型的方法和系统。 然后使用经过训练的基于图像的测量模型来从其他晶片收集的测量图像数据直接计算一个或多个感兴趣的参数的值。 本文描述的基于图像的测量的方法和系统适用于计量和检验应用。
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公开(公告)号：US11313809B1
公开(公告)日：2022-04-26
申请号：US15587297
申请日：2017-05-04
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Wei Lu
Abstract: Methods and systems for estimating values of process parameters based on measurements of structures fabricated on a product wafer are presented herein. Exemplary process parameters include lithography dosage and exposure and lithography scanner aberrations. A measurement model is employed to estimate process parameter values from measurements of structures fabricated on a wafer by a particular fabrication process. The measurement model includes process parameters and geometric parameters of structures under measurement. In some embodiments, a model based regression of both a process model and a metrology model is employed to arrive at estimates of at least one process parameter value based on measurements of a fabricated structure. In some embodiments, a trained measurement model is employed to directly estimate process parameter values based on measurements of structures. The measurement model is trained based on simulated measurement signals associated with measurements of shape profiles generated by different sets of process parameter values.
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公开(公告)号：US10732516B2
公开(公告)日：2020-08-04
申请号：US15861938
申请日：2018-01-04
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Andrei V. Shchegrov , Wei Lu
Abstract: Methods and systems for robust overlay error measurement based on a trained measurement model are described herein. The measurement model is trained from raw scatterometry data collected from Design of Experiments (DOE) wafers by a scatterometry based overlay metrology system. Each measurement site includes one or more metrology targets fabricated with programmed overlay variations and known process variations. Each measurement site is measured with known metrology system variations. In this manner, the measurement model is trained to separate actual overlay from process variations and metrology system variations which affect the overlay measurement. As a result, an estimate of actual overlay by the trained measurement model is robust to process variations and metrology system variations. The measurement model is trained based on scatterometry data collected from the same metrology system used to perform measurements. Thus, the measurement model is not sensitive to systematic errors, aysmmetries, etc.
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公开(公告)号：US10139352B2
公开(公告)日：2018-11-27
申请号：US14882370
申请日：2015-10-13
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Wei Lu , Andrei V. Shchegrov , Pablo Rovira , Jonathan M. Madsen
IPC: G01N21/93 , G01N21/956
Abstract: Methods and systems for measuring metrology targets smaller than the illumination spot size employed to perform the measurement are described herein. Collected measurement signals contaminated with information from structures surrounding the target area are reconstructed to eliminate the contamination. In some examples, measurement signals associated one or more small targets and one or more large targets located in close proximity to one another are used to train a signal reconstruction model. The model is subsequently used to reconstruct measurement signals from other small targets. In some other examples, multiple measurements of a small target at different locations within the target are de-convolved to estimate target area intensity. Reconstructed measurement signals are determined by a convolution of the illumination spot profile and the target area intensity. In a further aspect, the reconstructed signals are used to estimate values of parameters of interest associated with the measured structures.
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公开(公告)号：US20180252514A1
公开(公告)日：2018-09-06
申请号：US15861938
申请日：2018-01-04
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Andrei V. Shchegrov , Wei Lu
Abstract: Methods and systems for robust overlay error measurement based on a trained measurement model are described herein. The measurement model is trained from raw scatterometry data collected from Design of Experiments (DOE) wafers by a scatterometry based overlay metrology system. Each measurement site includes one or more metrology targets fabricated with programmed overlay variations and known process variations. Each measurement site is measured with known metrology system variations. In this manner, the measurement model is trained to separate actual overlay from process variations and metrology system variations which affect the overlay measurement. As a result, an estimate of actual overlay by the trained measurement model is robust to process variations and metrology system variations. The measurement model is trained based on scatterometry data collected from the same metrology system used to perform measurements. Thus, the measurement model is not sensitive to systematic errors, aysmmetries, etc.
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