公开(公告)号：US12132110B2

公开(公告)日：2024-10-29

申请号：US17462554

申请日：2021-08-31

申请人： KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION

发明人： Dae Hwan Kim ,  Dong Yeon Kang ,  Jun Tae Jang ,  Shin Young Park ,  Hyun Kyu Lee ,  Sung Jin Choi ,  Dong Myoung Kim ,  Wonjung Kim

IPC分类号： H01L29/786 ,  G06N3/063 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/788

CPC分类号： H01L29/7841 ,  G06N3/063 ,  H01L21/02178 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/7883

摘要： Disclosed is a synaptic transistor, including a substrate, an expansion gate electrode disposed to extend in one direction on the substrate, a gate insulating layer including ions, covering the expansion gate electrode, and disposed on the substrate, a channel layer disposed on the gate insulating layer to correspond to one end of the expansion gate electrode, source and drain electrodes spaced apart from each other, covering both ends of the channel layer, and disposed on the gate insulating layer, and a pad electrode disposed on the gate insulating layer to correspond to the other end of the expansion gate electrode.