公开(公告)号：US20220068379A1

公开(公告)日：2022-03-03

申请号：US17405174

申请日：2021-08-18

Applicant: KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION

Inventor： Donguk KIM ,  Jun Tae JANG ,  Dae Hwan KIM ,  Dong Myoung KIM ,  Sung Jin CHOI

IPC: G11C13/00 ,  H01L27/24

Abstract: The present invention relates to a synapse and synaptic array, and a computing system using the same. The synaptic device according to an exemplary embodiment of the present invention includes a transistor in which a synaptic input signal is applied to any one electrode of source and drain electrodes; and a plurality of two-terminal variable resistance memory devices in which a first electrode is electrically globally connected to a gate electrode of the transistor, wherein a separate memory voltage is applied to a second electrode of each variable resistance memory device to adjust a gate voltage applied to the gate electrode, thereby controlling a synaptic output signal which is output to the other one of the source and drain electrodes.