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1.发明授权公开(公告)号：US11521678B2
公开(公告)日：2022-12-06
申请号：US17405174
申请日：2021-08-18
Inventor： Donguk Kim , Jun Tae Jang , Dae Hwan Kim , Dong Myoung Kim , Sung Jin Choi
Abstract: The present invention relates to a synapse and synaptic array, and a computing system using the same. The synaptic device according to an exemplary embodiment of the present invention includes a transistor in which a synaptic input signal is applied to any one electrode of source and drain electrodes; and a plurality of two-terminal variable resistance memory devices in which a first electrode is electrically globally connected to a gate electrode of the transistor, wherein a separate memory voltage is applied to a second electrode of each variable resistance memory device to adjust a gate voltage applied to the gate electrode, thereby controlling a synaptic output signal which is output to the other one of the source and drain electrodes.
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