公开(公告)号：US09461600B2

公开(公告)日：2016-10-04

申请号：US14590253

申请日：2015-01-06

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang-Gug Lee ,  Bao Lam Huu ,  Suna Kim ,  Jeong Seon Lee

IPC: H03F3/191 ,  H03F3/193 ,  H03F1/08 ,  G06F17/50 ,  H03F1/56 ,  H03H7/38

CPC classification number: H03F3/193 ,  G06F17/5045 ,  G06F17/5063 ,  G06F2217/02 ,  G06F2217/06 ,  G06F2217/08 ,  G06F2217/78 ,  H03F1/086 ,  H03F1/56 ,  H03F2200/222 ,  H03F2200/294 ,  H03F2200/387 ,  H03H7/38

Abstract: The present invention provides a power gain-boosting technique for an amplifier in order to compensate for the decrease of Gmag in a transistor at high frequencies. A power gain-boosting technique of the present invention comprises the steps of: finding the Maximum Unilateral Gain or Mason's Invariant U of a transistor; designing a linear, lossless, reciprocal network embedding the transistor so that the final equivalent S-, Y-, or Z-parameters satisfy the condition: S ⁢ 21 S 12 = Y 2 ⁢ ⁢ 1 Y 1 ⁢ ⁢ 2 = Z 2 ⁢ ⁢ 1 Z 1 ⁢ ⁢ 2 = - [ ( 2 ⁢ U - 1 ) + 2 ⁢ U ⁡ ( U - 1 ) ] ; embedding the transistor into the linear, lossless, reciprocal network; and constructing simultaneous conjugate matching.

Abstract translation: 本发明提供了一种用于放大器的功率增益增强技术，以补偿高频下晶体管中的Gmag的减小。 本发明的增益增益技术包括以下步骤：找出晶体管的最大单边增益或梅森不变量U; 设计嵌入晶体管的线性无损互逆网络，使得最终的等效S，Y或Z参数满足以下条件：S 21 21 = Y 21 Y 12 = Z 2 （1）U 1（U-1）+ 2（U-1）]; 将晶体管嵌入线性无损互逆网络; 并构建同时的共轭匹配。

公开(公告)号：US20150333707A1

公开(公告)日：2015-11-19

申请号：US14590253

申请日：2015-01-06

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang-Gug Lee ,  Bao Lam Huu ,  Suna Kim ,  Jeong Seon Lee

IPC: H03F1/08 ,  G06F17/50 ,  H03F3/193

CPC classification number: H03F3/193 ,  G06F17/5045 ,  G06F17/5063 ,  G06F2217/02 ,  G06F2217/06 ,  G06F2217/08 ,  G06F2217/78 ,  H03F1/086 ,  H03F1/56 ,  H03F2200/222 ,  H03F2200/294 ,  H03F2200/387 ,  H03H7/38

Abstract: The present invention provides a power gain-boosting technique for an amplifier in order to compensate for the decrease of Gmag in a transistor at high frequencies. A power gain-boosting technique of the present invention comprises the steps of: finding the Maximum Unilateral Gain or Mason's Invariant U of a transistor; designing a linear, lossless, reciprocal network embedding the transistor so that the final equivalent S-, Y-, or Z-parameters satisfy the condition: S  21 S 12 = Y 2   1 Y 1   2 = Z 2   1 Z 1   2 = - [ ( 2  U - 1 ) + 2  U  ( U - 1 ) ] ; embedding the transistor into the linear, lossless, reciprocal network; and constructing simultaneous conjugate matching.

Abstract translation: 本发明提供了一种用于放大器的功率增益增强技术，以补偿高频下晶体管中的Gmag的减小。 本发明的增益增益技术包括以下步骤：找出晶体管的最大单边增益或梅森不变量U; 设计嵌入晶体管的线性无损互逆网络，使得最终的等效S，Y或Z参数满足以下条件：S 21 21 = Y 21 Y 12 = Z 2 （1）U 1（U-1）+ 2（U-1）]; 将晶体管嵌入线性无损互逆网络; 并构建同时的共轭匹配。