公开(公告)号：US20240176245A1

公开(公告)日：2024-05-30

申请号：US18435960

申请日：2024-02-07

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jungchul SONG ,  Min Jun BAK ,  Wan-Gyu LEE ,  Jong-Wan PARK

IPC: G03F7/22 ,  G03F1/48 ,  G03F1/80 ,  G03F1/82 ,  G03F7/004

CPC classification number: G03F7/22 ,  G03F1/48 ,  G03F1/80 ,  G03F1/82 ,  G03F7/0046

Abstract: A patterning method includes: forming a first photoresist layer on a substrate; performing first divisional exposure on the first photoresist layer with first exposure energy, higher than or equal to threshold energy, using a reticle having lines and spaces of a mask pattern and an exposure apparatus; and shifting the reticle below a line width of the mask pattern and performing second divisional exposure on the first photoresist layer with second exposure energy, higher than or equal to the threshold energy, using the reticle to form a photoresist pattern. A spatial distribution of the first exposure energy may overlap a spatial distribution of the second exposure energy.