公开(公告)号：US20240176245A1

公开(公告)日：2024-05-30

申请号：US18435960

申请日：2024-02-07

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jungchul SONG ,  Min Jun BAK ,  Wan-Gyu LEE ,  Jong-Wan PARK

IPC: G03F7/22 ,  G03F1/48 ,  G03F1/80 ,  G03F1/82 ,  G03F7/004

CPC classification number: G03F7/22 ,  G03F1/48 ,  G03F1/80 ,  G03F1/82 ,  G03F7/0046

Abstract: A patterning method includes: forming a first photoresist layer on a substrate; performing first divisional exposure on the first photoresist layer with first exposure energy, higher than or equal to threshold energy, using a reticle having lines and spaces of a mask pattern and an exposure apparatus; and shifting the reticle below a line width of the mask pattern and performing second divisional exposure on the first photoresist layer with second exposure energy, higher than or equal to the threshold energy, using the reticle to form a photoresist pattern. A spatial distribution of the first exposure energy may overlap a spatial distribution of the second exposure energy.

公开(公告)号：US20230367201A1

公开(公告)日：2023-11-16

申请号：US18354593

申请日：2023-07-18

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jungchul SONG ,  Jae-Sub OH ,  Min Jun PARK ,  Hui Jae CHO ,  Kwang Hee KIM ,  Chang Hee HAN

IPC: G03F1/36

CPC classification number: G03F1/36 ,  G03F7/2022

Abstract: A method for forming a line and a space pattern, according to one embodiment of the present invention, comprises exposing a mask in a first direction and a second direction on a substrate and stitching same. The method for forming a line and a space pattern comprises the steps of: performing first exposure on the substrate so that first shots of the mask come in contact with each other in the first direction; and performing second exposure on the substrate so that second shots of the mask come in contact with each other so as to be distanced in the second direction and be offset with respect to the first shots in the first direction.