公开(公告)号：US10315980B2

公开(公告)日：2019-06-11

申请号：US15744687

申请日：2016-08-24

Applicant: LG Chem, Ltd. ,  Korea Advanced Institute of Science and Technology

Inventor： Dongsu Song ,  Daesung Kim ,  Wonjae Lee ,  Yongjin Choe ,  Hyunjoo Lee ,  Minsu Kim

IPC: C07C67/40 ,  C07C67/48 ,  C07C67/62 ,  C07C69/54 ,  B01J37/34 ,  B01J23/52 ,  B01J37/03 ,  B01J37/16 ,  B01J23/66 ,  B01J37/02 ,  B01J35/02

Abstract: The present disclosure relates to a catalyst used in the preparation of acrylic acid and acrylic acid preparation method using the same, and more specifically, discloses a catalyst capable of enhancing selectivity of acrylic acid and a production yield of acrylic acid when preparing acrylic acid from allyl alcohol using a heterogeneous catalyst including bimetallic alloy catalyst particles of gold and another metal, and an acrylic acid preparation method using the same.

公开(公告)号：US10664589B2

公开(公告)日：2020-05-26

申请号：US15485868

申请日：2017-04-12

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Brent ByungHoon Kang ,  Daehee Jang ,  Minsu Kim ,  Jonghwan Kim ,  Daegyeong Kim ,  Hojoon Lee

IPC: G06F12/14 ,  G06F12/00 ,  G06F21/52 ,  G06F21/57 ,  H04L29/06

Abstract: A memory alignment randomization method of a memory heap exploit is provided, memory alignment of objects inside a heap area is randomly performed to mitigate the exploits of the vulnerability of the software memory heap area The heap exploit is powerfully mitigated by aligning randomly obtained memory addresses instead of aligning memory addresses at multiples of 4 or 8 when the memory alignment for the objects inside the heap area.

公开(公告)号：US11990389B2

公开(公告)日：2024-05-21

申请号：US17550347

申请日：2021-12-14

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Keeyoung Son ,  Joung-Ho Kim ,  Subin Kim ,  Shinyoung Park ,  Seungtaek Jeong ,  Gapyeol Park ,  Boogyo Sim ,  Hyunwook Park ,  Taein Shin ,  Seongguk Kim ,  Kyungjune Son ,  Minsu Kim

IPC: H01L23/473 ,  H01L23/373 ,  H01L23/48 ,  H01L23/498 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L23/473 ,  H01L23/3736 ,  H01L23/481 ,  H01L23/49822 ,  H01L25/0657 ,  H01L25/18 ,  H01L2225/06513 ,  H01L2225/06517

Abstract: A semiconductor package includes an interposer, an electronic device having a first side surface and a second side surface opposite to the first side surface, and including a plurality of memory dies stacked in a vertical direction, at least one first through pipe passing through the electronic device in the vertical direction adjacent to the first side surface, and moving a cooling liquid therein, and a plurality of thermal transmission lines extending in a horizontal direction inside the memory die, and extending in parallel from the first through pipe toward the second side surface.

公开(公告)号：US20230028887A1

公开(公告)日：2023-01-26

申请号：US17550347

申请日：2021-12-14

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Keeyoung Son ,  Joung-Ho Kim ,  Subin Kim ,  Shinyoung Park ,  Seungtaek Jeong ,  Gapyeol Park ,  Boogyo Sim ,  Hyunwook Park ,  Taein Shin ,  Seongguk Kim ,  Kyungjune Son ,  Minsu Kim

IPC: H01L23/473 ,  H01L23/498 ,  H01L25/065 ,  H01L23/48 ,  H01L23/373

Abstract: A semiconductor package includes an interposer, an electronic device having a first side surface and a second side surface opposite to the first side surface, and including a plurality of memory dies stacked in a vertical direction, at least one first through pipe passing through the electronic device in the vertical direction adjacent to the first side surface, and moving a cooling liquid therein, and a plurality of thermal transmission lines extending in a horizontal direction inside the memory die, and extending in parallel from the first through pipe toward the second side surface.

公开(公告)号：US20180157827A1

公开(公告)日：2018-06-07

申请号：US15485868

申请日：2017-04-12

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Brent ByungHoon Kang ,  Daehee Jang ,  Minsu Kim ,  Jonghwan Kim ,  Daegyeong Kim ,  Hojoon Lee

IPC: G06F21/52 ,  G06F21/57

Abstract: A memory alignment randomization method of a memory heap exploit is provided, memory alignment of objects inside a heap area is randomly performed to mitigate the exploits of the vulnerability of the software memory heap area The heap exploit is powerfully mitigated by aligning randomly obtained memory addresses instead of aligning memory addresses at multiples of 4 or 8 when the memory alignment for the objects inside the heap area.