公开(公告)号：US20250036572A1

公开(公告)日：2025-01-30

申请号：US18511301

申请日：2023-11-16

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Shinhyun CHOI ,  Myoungsoo Jung ,  Hakcheon Jeong ,  See-On Park ,  Donghyun Gouk ,  Seonghyeon Jang

IPC: G06F12/12 ,  G06F12/0864

Abstract: A method and electronic circuit for memory replacement are provided. The method for memory replacement includes generating an input signal in response to an event for a memory, providing the input signal to a time-varying circuit including a plurality of time-varying devices, generating an output signal by reading a value stored in at least one time-varying device among the plurality of time-varying devices, and determining a storage space for replacement, based on the output signal.