公开(公告)号：US20160163887A1

公开(公告)日：2016-06-09

申请号：US14908461

申请日：2014-06-03

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan JEONG ,  Sung Jae PARK ,  Ho Sung KIM

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/028

CPC classification number: H01L31/02363 ,  H01L31/02168 ,  H01L31/022483 ,  H01L31/0284 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Disclosed are a silicon substrate for a solar cell and a method of manufacturing the same, wherein the reflectance of solar light can be decreased by gap-filling with AZO, and electrical properties, especially resistivity, can be reduced through e-beam irradiation, thus maximizing the cell efficiency and improving the electrical properties of AZO applied to a silicon solar cell.

Abstract translation: 公开了一种用于太阳能电池的硅衬底及其制造方法，其中通过间隙填充AZO可以减少太阳光的反射率，并且可以通过电子束照射降低电性能，特别是电阻率，因此 使电池效率最大化并改善AZO应用于硅太阳能电池的电性能。