公开(公告)号：US20250129469A1

公开(公告)日：2025-04-24

申请号：US18794977

申请日：2024-08-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Han KIM ,  Ji-Soo JANG ,  Sunghoon HUR ,  Hyun-Cheol SONG ,  Seung Hyub BAEK ,  Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG ,  Seong Keun KIM

IPC: C23C16/04 ,  C23C16/06

Abstract: The present invention relates to a method for area-selective growth of a noble metal thin film using atomic layer deposition, which can increase the growth thickness of a thin film with a high selectivity by inducing the generation of volatile noble metal oxides and suppressing the growth of the thin film in non-growth areas in depositing a noble metal thin film on the growth area of a substrate using nucleation delay.