公开(公告)号：US20240180041A1

公开(公告)日：2024-05-30

申请号：US18522771

申请日：2023-11-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Soo Young JUNG ,  Sunghoon HUR ,  Ji-Soo JANG ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  Chong Yun KANG ,  Ji-Won CHOI ,  Jin Sang KIM

IPC: H10N30/00 ,  C30B23/04 ,  C30B29/22 ,  H10N30/072 ,  H10N30/082 ,  H10N30/853

CPC classification number: H10N30/10513 ,  C30B23/04 ,  C30B29/22 ,  H10N30/072 ,  H10N30/082 ,  H10N30/8536 ,  H10N30/8548 ,  H10N30/8561

Abstract: The present invention relates to a heterojunction semiconductor substrate having excellent dielectric properties, a method of manufacturing the same, and an electronic device using the same. The present invention provides a heterojunction semiconductor substrate with improved interlayer adhesion, low leakage current, and excellent dielectric properties that maintain strength in a ferroelectric fatigue experiment by interposing a metal layer and a conductive metal oxide layer on a semiconductor substrate to form an epitaxial oxide thin film layer composed of perovskite piezoelectric oxide. The heterojunction semiconductor substrate can be applied to sensors, actuators, transducers, or MEMS devices that use the high functionality of the high-quality epitaxial oxide thin film layer, including applications in electronic and optical devices.

公开(公告)号：US20250079461A1

公开(公告)日：2025-03-06

申请号：US18816387

申请日：2024-08-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won CHOI ,  Haena YIM ,  Yaelim HWANG ,  Chong Yun KANG ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Hyun-Cheol SONG ,  Jungho YOON ,  Ji-Soo JANG ,  Sunghoon HUR

IPC: H01M4/58 ,  C01B21/082 ,  H01M4/02 ,  H01M10/0525

Abstract: The present invention relates to a transparent anode active material having excellent light transmittance and electrical conductivity characteristics and a manufacturing method thereof, and a lithium ion battery and an all-solid-state lithium thin-film battery based on the same and having excellent charge/discharge capacity and charge/discharge rate, wherein the transparent anode active material according to the present invention is characterized by comprising a material of the following Chemical Formula 1: AgxSiOyN wherein x is 0

公开(公告)号：US20240180043A1

公开(公告)日：2024-05-30

申请号：US18511720

申请日：2023-11-16

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Min Seok KIM ,  Ji-Soo JANG ,  Sunghoon HUR ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG

IPC: H10N39/00

CPC classification number: H10N39/00

Abstract: Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and/or optical device.