公开(公告)号：US20240180041A1

公开(公告)日：2024-05-30

申请号：US18522771

申请日：2023-11-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Soo Young JUNG ,  Sunghoon HUR ,  Ji-Soo JANG ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  Chong Yun KANG ,  Ji-Won CHOI ,  Jin Sang KIM

IPC: H10N30/00 ,  C30B23/04 ,  C30B29/22 ,  H10N30/072 ,  H10N30/082 ,  H10N30/853

CPC classification number: H10N30/10513 ,  C30B23/04 ,  C30B29/22 ,  H10N30/072 ,  H10N30/082 ,  H10N30/8536 ,  H10N30/8548 ,  H10N30/8561

Abstract: The present invention relates to a heterojunction semiconductor substrate having excellent dielectric properties, a method of manufacturing the same, and an electronic device using the same. The present invention provides a heterojunction semiconductor substrate with improved interlayer adhesion, low leakage current, and excellent dielectric properties that maintain strength in a ferroelectric fatigue experiment by interposing a metal layer and a conductive metal oxide layer on a semiconductor substrate to form an epitaxial oxide thin film layer composed of perovskite piezoelectric oxide. The heterojunction semiconductor substrate can be applied to sensors, actuators, transducers, or MEMS devices that use the high functionality of the high-quality epitaxial oxide thin film layer, including applications in electronic and optical devices.

公开(公告)号：US20210336561A1

公开(公告)日：2021-10-28

申请号：US16953859

申请日：2020-11-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-Cheol SONG ,  CHONG YUN KANG ,  JIN SANG KIM ,  Ji-Won CHOI ,  SEUNG HYUB BAEK ,  Seong Keun KIM

IPC: H02N2/18 ,  H01L41/113 ,  H01L41/193

Abstract: Proposed is a self-resonance tuning piezoelectric energy harvester with broadband frequency, including: a piezoelectric beam which is extended along a horizontal direction; a fixing member which fixes opposite ends of the piezoelectric beam; and a mobile mass which the piezoelectric beam passes through, and which is capable of self-movement along the piezoelectric beam through a through-hole which has a free space in addition to a space which the piezoelectric beam passes through, wherein as the mobile mass moves to a position of the piezoelectric beam, generated displacement of a piezoelectric beam is increased, and as the generated displacement becomes greater than the free space, the mobile mass is fixed to a position of a piezoelectric beam at which resonance will occur.

公开(公告)号：US20210005609A1

公开(公告)日：2021-01-07

申请号：US16854471

申请日：2020-04-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang Tae KIM ,  Hyun-Cheol SONG ,  Seung Hyub BAEK ,  Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG ,  Seong Keun KIM

IPC: H01L27/108 ,  H01L21/285 ,  H01L49/02

Abstract: A method of manufacturing an electrode layer and a method of manufacturing a capacitor using the same are provided. The method of manufacturing the electrode layer includes performing a first sub-cycle sequentially providing a tin precursor and an oxygen source on a substrate, performing a second sub-cycle sequentially providing a tin precursor, a tantalum precursor, and an oxygen source on the substrate on which the first sub-cycle is performed, and repeating a cycle including the first sub-cycle and the second sub-cycle to form a tantalum-doped tin oxide layer on the substrate. A tantalum concentration in the tantalum-doped tin oxide layer is determined by the tin precursor provided in the second sub-cycle.

公开(公告)号：US20250079461A1

公开(公告)日：2025-03-06

申请号：US18816387

申请日：2024-08-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won CHOI ,  Haena YIM ,  Yaelim HWANG ,  Chong Yun KANG ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Hyun-Cheol SONG ,  Jungho YOON ,  Ji-Soo JANG ,  Sunghoon HUR

IPC: H01M4/58 ,  C01B21/082 ,  H01M4/02 ,  H01M10/0525

Abstract: The present invention relates to a transparent anode active material having excellent light transmittance and electrical conductivity characteristics and a manufacturing method thereof, and a lithium ion battery and an all-solid-state lithium thin-film battery based on the same and having excellent charge/discharge capacity and charge/discharge rate, wherein the transparent anode active material according to the present invention is characterized by comprising a material of the following Chemical Formula 1: AgxSiOyN wherein x is 0

公开(公告)号：US20200076331A1

公开(公告)日：2020-03-05

申请号：US16296218

申请日：2019-03-08

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-Cheol SONG ,  Chong Yun KANG ,  Jin Sang KIM ,  Ji-won CHOI ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Sang Tae KIM ,  Youn-hwan SHIN

IPC: H02N2/18 ,  H01L41/053 ,  H01L41/113 ,  H01L41/04

Abstract: Provided is a self-resonance tuning piezoelectric energy harvester. The self-resonance tuning piezoelectric energy harvester includes a piezoelectric beam which extends along a horizontal direction, a fixing element which fixes two ends of the piezoelectric beam, and a mass which is connected to the piezoelectric beam movably along the piezoelectric beam, wherein the mass includes a through-hole through which the piezoelectric beam passes, and makes the movement through the through-hole. According to the principle of continuous movement to the resonance position, the mass of the self-resonance tuning piezoelectric energy harvester induces the piezoelectric beam to generate displacement to the maximum and maximize the electricity production capacity of the piezoelectric energy harvester.

公开(公告)号：US20240180043A1

公开(公告)日：2024-05-30

申请号：US18511720

申请日：2023-11-16

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Min Seok KIM ,  Ji-Soo JANG ,  Sunghoon HUR ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG

IPC: H10N39/00

CPC classification number: H10N39/00

Abstract: Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and/or optical device.

公开(公告)号：US20230010061A1

公开(公告)日：2023-01-12

申请号：US17839207

申请日：2022-06-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SEUNG HYUB BAEK ,  RUIGUANG NING ,  Jae-Hoon HAN ,  Byung Chul LEE ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  CHONG YUN KANG ,  Ji-Won CHOI ,  JIN SANG KIM

IPC: H01L41/313 ,  H01L41/08 ,  H01L41/187

Abstract: A semiconductor substrate with oxide single crystal heterostructures, to which a sacrificial layer, an epitaxy functional oxide thin film having a perovskite structure and a metal layer are grown on an oxide single crystal substrate, prepared another metal layer on a semiconductor substrate, and bonded the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and separated the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding.

公开(公告)号：US20220086961A1

公开(公告)日：2022-03-17

申请号：US17475346

申请日：2021-09-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Hyun-Cheol SONG ,  Jungho YOON ,  Joohee JANG

IPC: H05B3/86 ,  C23C14/08 ,  C23C14/24 ,  H05B3/14

Abstract: The present disclosure provides a transparent thin film heater including: a metal layer; and a transparent conductive oxide layer, wherein the transparent conductive oxide layer includes a composition represented by the following Chemical Formula 1 and is doped with nitrogen: ZnxSn1−xO2  [Chemical Formula 1] wherein 0

公开(公告)号：US20210167352A1

公开(公告)日：2021-06-03

申请号：US16952087

申请日：2020-11-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Hyun-Cheol SONG ,  Sang Tae KIM ,  Hyun Seok LEE

IPC: H01M4/04 ,  H01M10/052 ,  H01M4/58

Abstract: Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]: SiNx   [Chemical Formula 1] (wherein 0