公开(公告)号：US11706994B2

公开(公告)日：2023-07-18

申请号：US15930892

申请日：2020-05-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byoung-Chul Min ,  Jun Woo Choi ,  Hee Gyum Park

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/80 ,  H10B61/22 ,  H10N50/85

Abstract: Disclosed is an electric field-controlled magnetoresistive random-access memory (MRAM) including memory cells. The memory cell has a heterogenous double tunnel junction structure including a first tunnel junction and a second tunnel junction. The first tunnel junction includes a magnetic tunnel junction layer having a magnetization direction that changes according to spin transfer torque when an external voltage is applied, and the second tunnel junction includes an electric-field control layer that controls an electric field applied to the magnetic tunnel junction layer to induce a change in magnetic anisotropy within the magnetic tunnel junction layer. The heterogeneous tunnel junction structure combines electric field-controlled magnetic anisotropy and spin transfer torque to enable low power driving of memory cells, thereby enabling a high energy-efficient electric field-controlled MRAM.