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公开(公告)号：US20190165254A1
公开(公告)日：2019-05-30
申请号：US16196659
申请日：2018-11-20
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Oukjae Lee , Byoung-Chul Min
Abstract: A spin torque magnetic RAM according to the present invention includes at least one row selection line positioned on a silicon substrate to induce a spin orbit interaction therein; at least one first magnetic pattern positioned on the row selection line; a second magnetic pattern positioned on the first magnetic pattern; a tunnel barrier positioned on the second magnetic pattern; and a third magnetic pattern positioned on the tunnel barrier, wherein the first magnetic pattern is made of a cobalt film, the first magnetic pattern and the second magnetic pattern have a total thickness of 5 nm to form a free layer, and the third magnetic pattern is formed with a pinned layer in which a magnetization direction is fixed.
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公开(公告)号：US20240393413A1
公开(公告)日：2024-11-28
申请号：US18231994
申请日：2023-08-09
Inventor： Joon-Hyun Kwon , Hyun-Soo Kim , Sang-Hyeok Yang , Su-Jung Noh , Han-Saem Lee , Ji-Sung Lee , Byoung-Chul Min , Jong-Bum Choi , Dong-Soo Han
Abstract: A spin Hall magnetic sensor includes a plurality of magnetic thin film units including a magnetic layer stacked on a non-magnetic layer, and a plurality of non-magnetic substances disposed between the plurality of magnetic thin film units, The magnetic includes a Wheatstone bridge structure to observe a magnetic Hall resistance generated by a spin orbit torque (SOT).
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公开(公告)号：US10529774B1
公开(公告)日：2020-01-07
申请号：US16134523
申请日：2018-09-18
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Gyung-Min Choi , Byoung-Chul Min
Abstract: The present invention relates to a magnetic RAM including a memory cell, the memory cell including a metal layer, a magnetic tunnel junction layer storing predefined information by causing a magnetization direction to be up or down, a spin-current transfer layer transferring spin current to the magnetic tunnel junction layer, a spin-current generation layer generating the spin current, and a thermal electron injection layer injecting thermal electrons into the spin-current generation layer, and the magnetization direction may be changed due to spin transfer torque generated in the magnetic tunnel junction layer, whereby it is possible to reduce current density consumed for switching the magnetization direction of the free magnetic sub-layer in the magnetic tunnel junction layer.
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Patent Agency Ranking
公开(公告)号：US11706994B2
公开(公告)日：2023-07-18
申请号：US15930892
申请日：2020-05-13
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Byoung-Chul Min , Jun Woo Choi , Hee Gyum Park
Abstract: Disclosed is an electric field-controlled magnetoresistive random-access memory (MRAM) including memory cells. The memory cell has a heterogenous double tunnel junction structure including a first tunnel junction and a second tunnel junction. The first tunnel junction includes a magnetic tunnel junction layer having a magnetization direction that changes according to spin transfer torque when an external voltage is applied, and the second tunnel junction includes an electric-field control layer that controls an electric field applied to the magnetic tunnel junction layer to induce a change in magnetic anisotropy within the magnetic tunnel junction layer. The heterogeneous tunnel junction structure combines electric field-controlled magnetic anisotropy and spin transfer torque to enable low power driving of memory cells, thereby enabling a high energy-efficient electric field-controlled MRAM.
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公开(公告)号：US20190393264A1
公开(公告)日：2019-12-26
申请号：US16134523
申请日：2018-09-18
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Gyung-Min Choi , Byoung-Chul Min
Abstract: The present invention relates to a magnetic RAM including a memory cell, the memory cell including a metal layer, a magnetic tunnel junction layer storing predefined information by causing a magnetization direction to be up or down, a spin-current transfer layer transferring spin current to the magnetic tunnel junction layer, a spin-current generation layer generating the spin current, and a thermal electron injection layer injecting thermal electrons into the spin-current generation layer, and the magnetization direction may be changed due to spin transfer torque generated in the magnetic tunnel junction layer, whereby it is possible to reduce current density consumed for switching the magnetization direction of the free magnetic sub-layer in the magnetic tunnel junction layer.
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6.发明授权公开(公告)号：US11193988B2
公开(公告)日：2021-12-07
申请号：US16687213
申请日：2019-11-18
Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE , KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , KOREA BASIC SCIENCE INSTITUTE
Inventor： Kyoung-Woong Moon , Chan Yong Hwang , Byoung-Chul Min , Seung-young Park
Abstract: Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.
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公开(公告)号：US10886457B2
公开(公告)日：2021-01-05
申请号：US16196659
申请日：2018-11-20
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Oukjae Lee , Byoung-Chul Min
Abstract: A spin torque magnetic RAM according to the present invention includes at least one row selection line positioned on a silicon substrate to induce a spin orbit interaction therein; at least one first magnetic pattern positioned on the row selection line; a second magnetic pattern positioned on the first magnetic pattern; a tunnel barrier positioned on the second magnetic pattern; and a third magnetic pattern positioned on the tunnel barrier, wherein the first magnetic pattern is made of a cobalt film, the first magnetic pattern and the second magnetic pattern have a total thickness of 5 nm to form a free layer, and the third magnetic pattern is formed with a pinned layer in which a magnetization direction is fixed.
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公开(公告)号：US20180364181A1
公开(公告)日：2018-12-20
申请号：US15974111
申请日：2018-05-08
Inventor： Seung-young Park , Sang-il Kim , Younghun Jo , Byoung-Chul Min
IPC: G01N22/02
Abstract: Disclosed is a wafer inspection apparatus. The wafer inspection apparatus includes: a magnetic field generating unit forming a magnetic field such that magnetic lines of force flow in a direction perpendicular or parallel to a first surface of a wafer on which a magnetic thin film is formed; a microwave guide unit emitting microwaves to a measurement region that is at least a partial region of the wafer and is a region affected by the magnetic field generated by the magnetic field generating unit; and a sensing unit receiving waves reflected or transmitted after the microwaves are emitted to the measurement region from the microwave guide unit.
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