公开(公告)号：US20150380499A9

公开(公告)日：2015-12-31

申请号：US13659226

申请日：2012-10-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young-Jei OH ,  Chil-Hyoung LEE ,  Won-Kook CHOI ,  Jeon-Kook LEE ,  Young-Soo NO

IPC: H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L21/20

CPC classification number: H01L29/78693 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2  [Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (μ) and rectification ratio as well as transparency.

Abstract translation: p型透明氧化物半导体包括以下化学式1所示的氧化锡化合物：Sn1-xMxO2 [化学式1]其中，在化学式1中，M为三价金属，X为0.01的实数 ~0.05。 由于优异的电气和光学性质，p型透明氧化物半导体可应用于诸如TFT-LCD和透明太阳能电池的有源半导体器件，并且在可见光透射率（T），载流子迁移率（μ）和 整改率以及透明度。