公开(公告)号：US20150380499A9

公开(公告)日：2015-12-31

申请号：US13659226

申请日：2012-10-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young-Jei OH ,  Chil-Hyoung LEE ,  Won-Kook CHOI ,  Jeon-Kook LEE ,  Young-Soo NO

IPC: H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L21/20

CPC classification number: H01L29/78693 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2  [Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (μ) and rectification ratio as well as transparency.

Abstract translation: p型透明氧化物半导体包括以下化学式1所示的氧化锡化合物：Sn1-xMxO2 [化学式1]其中，在化学式1中，M为三价金属，X为0.01的实数 ~0.05。 由于优异的电气和光学性质，p型透明氧化物半导体可应用于诸如TFT-LCD和透明太阳能电池的有源半导体器件，并且在可见光透射率（T），载流子迁移率（μ）和 整改率以及透明度。

公开(公告)号：US20150187983A1

公开(公告)日：2015-07-02

申请号：US14629940

申请日：2015-02-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young-Jei OH ,  Byung-yong WANG

IPC: H01L31/18 ,  H01L31/0224 ,  H01B1/02

CPC classification number: H01L31/1884 ,  B22F1/0025 ,  B22F3/10 ,  B22F9/24 ,  B82Y30/00 ,  C22C5/06 ,  C22C9/00 ,  C22C19/03 ,  H01B1/02 ,  H01B1/026 ,  H01L31/022466 ,  Y02E10/50

Abstract: Metal nanowires with high linearity can be produced using metal salts at a relatively low temperature. A transparent conductive film can be formed using the metal nanowires. Particularly, the transparent conductive film has high transmittance, low sheet resistance, and good thermal, chemical and mechanical stability. The transparent conductive film has a high electrical conductivity due to the high linearity of the metal nanowires. The metal nanowires take up 5% or less of the volume of the transparent conductive film, ensuring high transmittance of the transparent conductive film. Furthermore, the metal nanowires are useful as replacements for existing conductive materials, such as ITO, conductive polymers, carbon nanotubes and graphene. The metal nanowires can be applied to flexible substrates and other various substrates due to their good adhesion and high applicability to the substrates. Moreover, the metal nanowires can find application in various fields, such as displays and solar cell devices.

Abstract translation: 具有高线性度的金属纳米线可以在较低的温度下使用金属盐生产。 可以使用金属纳米线形成透明导电膜。 特别地，透明导电膜具有高透射率，低薄层电阻，以及良好的热，化学和机械稳定性。 透明导电膜由于金属纳米线的高线性度而具有高导电性。 金属纳米线占透明导电膜的体积的5％以下，确保透明导电膜的高透射率。 此外，金属纳米线可用作现有导电材料（例如ITO，导电聚合物，碳纳米管和石墨烯）的替代物。 金属纳米线由于其良好的粘合性和对基材的高适用性而可应用于柔性基板和其它各种基板。 此外，金属纳米线可用于各种领域，例如显示器和太阳能电池器件。