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公开(公告)号:US20210220631A1
公开(公告)日:2021-07-22
申请号:US17153969
申请日:2021-01-21
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , Industry-University Cooperation Foundation Hanyang University ERICA Campus
Inventor: Myoung-Ryul OK , So Yeon KIM , Yoon Ki JOUNG , Yu Chan KIM , Hyun Kwang SEOK , Hyung-Seop HAN , Hojeong JEON , Hyunseon SEO , Inho KIM , Kyoung Won PARK , Yongwoo CHUNG , Jaekyun KIM
Abstract: Provided are phototherapeutic needle patches usable for phototherapy by using needle patches capable of injecting drugs or cosmetic substances to patients, and methods of manufacturing the same. A phototherapeutic needle patch may include a patch body attachable to skin of a patient, at least one microneedle protruding from the patch body, one end of the microneedle configured to deliver a drug through stratum corneum of the skin to inner tissues of the skin, and light grooves formed in a concave shape along a length direction of the microneedle in such a manner that therapeutic light radiated from a light source for phototherapy easily penetrates into the skin along the microneedle.
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公开(公告)号:US20200208254A1
公开(公告)日:2020-07-02
申请号:US16691613
申请日:2019-11-22
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Yu Chan KIM , Hyun Kwang SEOK , SEUNG HEE HAN , Hojeong JEON , Myoung-Ryul OK , Hyunseon SEO , Kyoung Won PARK , Yeon Wook JUNG , Pil Ryung CHA
Abstract: Provided is a method of increasing corrosion resistance of a magnesium (Mg) member. The method includes preparing a Mg member, and ion-implanting a doping element into a surface of the Mg member. Herein, the doping element includes an element capable of increasing a Fermi energy level of magnesium oxide (MgO) when doped on MgO.
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公开(公告)号:US20180291268A1
公开(公告)日:2018-10-11
申请号:US15860902
申请日:2018-01-03
Applicant: SAMSUNG DISPLAY CO., LTD. , KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Min Ki NAM , Kyoung Won PARK , Keun Chan OH , Jae Jin LYU , Baek Hee LEE , Hyeok Jin LEE , Jaikyeong KIM , Heesuk KIM , Wan Ki BAE , Doh Chang LEE
IPC: C09K11/88
Abstract: A method of manufacturing a quantum dot, the method including preparing a CdS/CdSe/CdS quantum dot that includes a CdS-containing first core, a CdSe-containing second core, and a CdS-containing shell; forming a Cu2S/Cu2Se/Cu2S quantum dot by injecting the CdS/CdSe/CdS quantum dot into a solution containing a Cu precursor; and forming a ZnS/ZnSe/ZnS quantum dot by injecting the Cu2S/Cu2Se/Cu2S quantum dot into a solution containing a Zn precursor.
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