公开(公告)号：US20180116592A1

公开(公告)日：2018-05-03

申请号：US15429196

申请日：2017-02-10

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jung Ah LIM ,  SOO JIN KIM ,  Jeon Kook LEE ,  Do Kyung Hwang

IPC: A61B5/00 ,  H01L29/786 ,  H01L51/05 ,  A61B5/0492 ,  G01N27/414

CPC classification number: A61B5/6804 ,  A61B5/0408 ,  A61B5/0492 ,  A61B2560/0468 ,  A61B2562/0209 ,  A61B2562/125 ,  D02G3/441 ,  H01L29/7869 ,  H01L51/0512 ,  H01L51/052 ,  H01L51/055

Abstract: The present invention relates to a fibrous transistor, and a method of manufacturing the same, and more particularly, to a fibrous transistor, in which a source fiber and a drain fiber are formed in a twisted state in a longitudinal direction, so that a contact surface of the source fiber and the drain fiber is increased, thereby enabling charges to easily move, and a method of manufacturing the same. Further, the present invention relates to a fibrous transistor, in which a gate insulating layer is formed by using ion gel, so that the fibrous transistor may obtain a high current at the same operation voltage, thereby having a low operation voltage, and a method of manufacturing the same.