公开(公告)号：US20240002945A1

公开(公告)日：2024-01-04

申请号：US18038454

申请日：2021-11-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kwan Hyi LEE ,  Youngdo JEONG ,  Ho Jun KIM ,  Sungwook PARK ,  Seongchan KIM

IPC: C12Q1/6886 ,  C12Q1/6837

CPC classification number: C12Q1/6886 ,  C12Q1/6837 ,  C12Q2600/156 ,  C12Q2600/178

Abstract: The present disclosure relates to a biosensor with surface-modified with reduced graphene oxide and a detection method using the same. The biosensor according to an aspect can effectively detect a target material in a urine sample, and thus, the use of the biosensor has an advantage in that prostate cancer can be diagnosed in a non-invasive, fast, and accurate manner.

公开(公告)号：US20240011996A1

公开(公告)日：2024-01-11

申请号：US18038453

申请日：2021-11-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kwan Hyi LEE ,  Ho Jun KIM ,  Youngdo JEONG ,  Sungwook PARK

IPC: G01N33/574

CPC classification number: G01N33/57492 ,  G01N33/57434 ,  G01N33/57488

Abstract: The present disclosure relates to a biomarker for diagnosis of prostate cancer and use of the biomarker. According to a biomarker composition for diagnosis of prostate cancer of the present disclosure, an optimal biomarker combination capable of effectively diagnosing prostate cancer has been discovered, and there is an advantage in that prostate cancer can be diagnosed with high accuracy by using the biomarker combination and a machine learning algorithm model.

公开(公告)号：US20180364194A1

公开(公告)日：2018-12-20

申请号：US15684939

申请日：2017-08-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kwan Hyi LEE ,  Minhong JEUN ,  Seok LEE ,  Sang Kyung KIM ,  Sungwook PARK

IPC: G01N27/414 ,  H01L29/45

Abstract: Provided is a field-effect transistor that can reduce noise, be produced by a simplified manufacturing method, and also have a plurality of active patterns and gate patterns designed to be combinable according to a detection purpose. The field-effect transistor includes a lower silicon layer and a buried oxide layer disposed on the lower silicon layer; an active pattern disposed on the buried oxide layer and including a channel region, a source region, and a drain region; a gate pattern disposed on the active pattern to at least partially overlap the active pattern; a source electrode disposed in direct contact with the source region on the active pattern, and a drain electrode disposed in direct contact with the drain region on the active pattern; and a gate insulating film disposed between the active pattern and the gate pattern.