公开(公告)号：US20170226437A1

公开(公告)日：2017-08-10

申请号：US15292214

申请日：2016-10-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jong Soo JURNG ,  Hyoun Duk JUNG ,  Min Su KIM ,  Eun Seuk PARK ,  Young Haeng LEE

IPC: C10L3/10 ,  B01J20/32 ,  B01J20/30 ,  B01D53/04 ,  B01J20/26

CPC classification number: C10L3/101 ,  B01D53/02 ,  B01D53/04 ,  B01D53/0438 ,  B01D53/0462 ,  B01D2253/202 ,  B01D2253/25 ,  B01D2253/302 ,  B01D2253/3425 ,  B01D2256/245 ,  B01D2257/556 ,  B01D2258/05 ,  B01D2259/40088 ,  B01J20/262 ,  B01J20/3085 ,  B01J20/3231 ,  B01J20/3295 ,  C10L2290/08 ,  C10L2290/12 ,  C10L2290/26 ,  C10L2290/46 ,  C10L2290/48 ,  C10L2290/542 ,  C10L2290/543 ,  C10L2290/547

Abstract: Provided are a reusable polymeric material for removing siloxane compounds in biogas, a method for removing siloxane using the same, and an apparatus therefor, and more particularly, a polyacrylate-based polymer absorbent for removing siloxane compounds in biogas and a method for removing siloxane compounds in biogas. The method for removing siloxane compounds in biogas includes (a) providing the biogas, and b) absorbing the siloxane compounds in a polymer absorbent by passing the biogas through the polymer absorbent according to any one of claims 1 to 5.

公开(公告)号：US20170368526A1

公开(公告)日：2017-12-28

申请号：US15407977

申请日：2017-01-17

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sun CHOI ,  Chan Hyuk PARK ,  Young Haeng LEE

IPC: B01J19/00 ,  B41J2/16

Abstract: Provided is a fabrication method of print head of MCM device formed micro patterned air gap capable of picoliter-scale droplet printing, and more particularly, is characterized in that comprising preparing silicon wafer 10 washed by piranha solution at step A, stacking silicon nitride films 20 and 20′ up front surface and back surface of prepared silicon wafer at step B, drying after applying photoresists 30 and 30′ to top surface and bottom surface of the silicon nitride film 20 and 20′ at step C, removing partially the photoresists through pre-determined pattern by irradiation of ultraviolet after arranging photomask 40 formed through pre-determined pattern in any one side of the photoresists 30 and 30′ at step D, forming sample droplet storage space opening by removing silicon nitride film 21 contacted to photoresists removed by pre-determined pattern at step E, removing the photoresists 30 and 30′ stacked up the silicon nitride film 20 and 20′ at step F, forming sample droplet storage space 50 by etching the silicon wafer at step G, and forming sample droplet opening 60 by irradiating ultrasonic waves at step H.