公开(公告)号：US20180334471A1

公开(公告)日：2018-11-22

申请号：US15775347

申请日：2016-10-11

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Bo Keun PARK ,  Taek-Mo CHUNG ,  Dong Ju JEON ,  Jeong Hwan HAN ,  Ji Hyeun NAM ,  Chang Gyoun KIM ,  Eun Ae JUNG

IPC: C07F7/22 ,  C07F5/00 ,  C23C16/455 ,  C23C16/40

CPC classification number: C07F7/2224 ,  C07F5/00 ,  C07F7/22 ,  C23C16/06 ,  C23C16/407 ,  C23C16/455 ,  C23C16/45525 ,  H01L21/02 ,  H01L21/205

Abstract: The present invention relates to a novel metal precursor having improved thermal stability and volatility and can provide: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.

公开(公告)号：US20180342297A1

公开(公告)日：2018-11-29

申请号：US15968038

申请日：2018-05-01

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Gun Hwan KIM ,  Young Kuk LEE ,  Taek Mo CHUNG ,  Bo Keun PARK ,  Jeong Hwan HAN ,  Ji Woon CHOI

IPC: G11C13/00 ,  G11C11/56

Abstract: There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.

公开(公告)号：US20160268510A1

公开(公告)日：2016-09-15

申请号：US15057571

申请日：2016-03-01

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Sang Jin MOON ,  Jong Cheol LEE ,  Ki Jeong KONG ,  Won Wook SO ,  Won Suk SHIN ,  Sang Kyu LEE ,  Bo Keun PARK ,  Muhammad JAHANDAR ,  Chang Eun SONG

IPC: H01L51/00 ,  H01L51/42 ,  C07F7/22 ,  C07F13/00 ,  C07F7/24 ,  H01L51/44 ,  H01L31/0256

CPC classification number: C07F7/22 ,  C07F7/24 ,  C07F13/00 ,  H01L51/424 ,  Y02E10/549

Abstract: Provided are a mixed metal halide perovskite compound, and an electronic device including the same, wherein the mixed metal halide perovskite compound includes an organic cation, two or more kinds of metal cations, and a halogen anion.

Abstract translation: 提供了一种混合金属卤化物钙钛矿化合物及其电子器件，其中混合金属卤化物钙钛矿化合物包括有机阳离子，两种或更多种金属阳离子和卤素阴离子。