公开(公告)号：US20140073099A1

公开(公告)日：2014-03-13

申请号：US13967492

申请日：2013-08-15

申请人： KWANGMIN PARK ,  BYONGJU KIM ,  JUMI YUN ,  JAEYOUNG AHN

发明人： KWANGMIN PARK ,  BYONGJU KIM ,  JUMI YUN ,  JAEYOUNG AHN

IPC分类号： H01L27/115

CPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L29/42332 ,  H01L29/7889 ,  H01L29/7926

摘要： A semiconductor device has a vertical channel and includes a first tunnel insulating layer adjacent to a blocking insulating layer, a third tunnel insulating layer adjacent to a channel pillar, and a second tunnel insulating layer between the first and third tunnel insulating layers. The energy band gap of the third tunnel insulating layer is smaller than that of the first tunnel insulating layer and is larger than that of the second tunnel insulating layer.

摘要翻译： 半导体器件具有垂直沟道，并且包括与隔离绝缘层相邻的第一隧道绝缘层，与沟道柱相邻的第三隧道绝缘层和在第一和第三隧道绝缘层之间的第二隧道绝缘层。 第三隧道绝缘层的能带隙小于第一隧道绝缘层的能带隙，并且大于第二隧道绝缘层的能带隙。