公开(公告)号：US20130270625A1

公开(公告)日：2013-10-17

申请号：US13838159

申请日：2013-03-15

申请人： Byong-hyun JANG ,  Janggn Yun ,  KwangSoo Seol ,  Jungdal Choi ,  Byongju Kim ,  Kwangmin Park ,  Junkyu Yang ,  SeungHyun Lim

发明人： Byong-hyun JANG ,  Janggn Yun ,  KwangSoo Seol ,  Jungdal Choi ,  Byongju Kim ,  Kwangmin Park ,  Junkyu Yang ,  SeungHyun Lim

IPC分类号： H01L29/792

CPC分类号： H01L29/7926 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/7889

摘要： A three-dimensional (3D) semiconductor memory device includes a stack structure, a channel structure, and a vertical insulator. The stack structure includes gate patterns and insulating patterns which are alternately and repeatedly stacked on a substrate. A channel structure penetrates the stack structure and is connected to the substrate. A vertical insulator includes a high-k dielectric layer. The vertical insulator is covered by the channel structure and the high-k dielectric pattern of the vertical insulator is in contact with the gate patterns.

摘要翻译： 三维（3D）半导体存储器件包括堆叠结构，沟道结构和垂直绝缘体。 堆叠结构包括交替重复堆叠在基板上的栅极图案和绝缘图案。 通道结构穿透堆叠结构并连接到基板。 垂直绝缘体包括高k电介质层。 垂直绝缘体被沟道结构覆盖，垂直绝缘体的高k电介质图案与栅极图案接触。

公开(公告)号：US20140073099A1

公开(公告)日：2014-03-13

申请号：US13967492

申请日：2013-08-15

申请人： KWANGMIN PARK ,  BYONGJU KIM ,  JUMI YUN ,  JAEYOUNG AHN

发明人： KWANGMIN PARK ,  BYONGJU KIM ,  JUMI YUN ,  JAEYOUNG AHN

IPC分类号： H01L27/115

CPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L29/42332 ,  H01L29/7889 ,  H01L29/7926

摘要： A semiconductor device has a vertical channel and includes a first tunnel insulating layer adjacent to a blocking insulating layer, a third tunnel insulating layer adjacent to a channel pillar, and a second tunnel insulating layer between the first and third tunnel insulating layers. The energy band gap of the third tunnel insulating layer is smaller than that of the first tunnel insulating layer and is larger than that of the second tunnel insulating layer.

摘要翻译： 半导体器件具有垂直沟道，并且包括与隔离绝缘层相邻的第一隧道绝缘层，与沟道柱相邻的第三隧道绝缘层和在第一和第三隧道绝缘层之间的第二隧道绝缘层。 第三隧道绝缘层的能带隙小于第一隧道绝缘层的能带隙，并且大于第二隧道绝缘层的能带隙。

公开(公告)号：US09437607B2

公开(公告)日：2016-09-06

申请号：US13967492

申请日：2013-08-15

申请人： Kwangmin Park ,  Byongju Kim ,  Jumi Yun ,  Jaeyoung Ahn

发明人： Kwangmin Park ,  Byongju Kim ,  Jumi Yun ,  Jaeyoung Ahn

IPC分类号： H01L21/8239 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L29/42332 ,  H01L29/7889 ,  H01L29/7926

摘要： A semiconductor device has a vertical channel and includes a first tunnel insulating layer adjacent to a blocking insulating layer, a third tunnel insulating layer adjacent to a channel pillar, and a second tunnel insulating layer between the first and third tunnel insulating layers. The energy band gap of the third tunnel insulating layer is smaller than that of the first tunnel insulating layer and is larger than that of the second tunnel insulating layer.

摘要翻译： 半导体器件具有垂直沟道，并且包括与隔离绝缘层相邻的第一隧道绝缘层，与沟道柱相邻的第三隧道绝缘层和在第一和第三隧道绝缘层之间的第二隧道绝缘层。 第三隧道绝缘层的能带隙小于第一隧道绝缘层的能带隙，并且大于第二隧道绝缘层的能带隙。