公开(公告)号：US09196629B2

公开(公告)日：2015-11-24

申请号：US14491385

申请日：2014-09-19

申请人： Kabushiki Kaisha Toshiba

发明人： Haruka Sakuma ,  Shuichi Toriyama ,  Masumi Saitoh ,  Yoshiaki Fukuzumi ,  Naoki Yasuda

IPC分类号： H01L27/115 ,  H01L29/66 ,  H01L29/792

CPC分类号： H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： A memory string includes: a first semiconductor layer formed in a columnar shape extending in a stacking direction perpendicular to a substrate; a tunnel insulating film formed surrounding a side surface of the first semiconductor layer; a charge accumulation film formed surrounding the tunnel insulating film and configured to be capable of accumulating charges; a block insulating film formed surrounding the charge accumulation film; and a plurality of first conductive layers formed surrounding the block insulating film and disposed at a predetermined interval in the stacking direction. The first semiconductor layer comprises carbon-doped silicon and being formed to have different carbon concentrations in upper and lower portions in the stacking direction.

摘要翻译： 存储器串包括：第一半导体层，其形成为在垂直于衬底的层叠方向上延伸的柱状; 形成在所述第一半导体层的侧面周围的隧道绝缘膜; 形成在隧道绝缘膜周围的电荷蓄积膜，其能够积累电荷; 形成在电荷累积膜周围的块绝缘膜; 以及多个第一导电层，其形成为围绕所述块绝缘膜并且以堆叠方向以预定间隔设置。 第一半导体层包括碳掺杂硅并且被形成为在堆叠方向上的上部和下部具有不同的碳浓度。

公开(公告)号：US09711518B2

公开(公告)日：2017-07-18

申请号：US15041640

申请日：2016-02-11

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Haruka Sakuma ,  Kiwamu Sakuma ,  Masahiro Kiyotoshi

IPC分类号： H01L27/115 ,  H01L27/1157 ,  H01L27/11578 ,  H01L29/423 ,  H01L29/66 ,  H01L29/792 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L27/1157 ,  B82Y10/00 ,  H01L27/11578 ,  H01L29/0673 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/792

摘要： Stack structures are arranged in a first direction horizontal to a semiconductor substrate, one of which has a longitudinal direction along a second direction. One stack structure has a plurality of semiconductor layers stacked between interlayer insulating layers. A memory film is formed on side surfaces of the stack structures and include a charge accumulation film of the memory cell. Conductive films are formed on side surfaces of the stack structures via the memory film. One stack structure has a shape increasing in width from above to below in a cross-section including the first and third directions. One conductive film has a shape increasing in width from above to below in a cross-section including the second and third directions. Predetermined portions in the semiconductor layers have different impurity concentrations between upper and lower semiconductor layers.

公开(公告)号：US20150102399A1

公开(公告)日：2015-04-16

申请号：US14491385

申请日：2014-09-19

申请人： Kabushiki Kaisha Toshiba

发明人： Haruka Sakuma ,  Shuichi Toriyama ,  Masumi Saitoh ,  Yoshiaki Fukuzumi ,  Naoki Yasuda

IPC分类号： H01L27/115

CPC分类号： H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： A memory string includes: a first semiconductor layer formed in a columnar shape extending in a stacking direction perpendicular to a substrate; a tunnel insulating film formed surrounding a side surface of the first semiconductor layer; a charge accumulation film formed surrounding the tunnel insulating film and configured to be capable of accumulating charges; a block insulating film formed surrounding the charge accumulation film; and a plurality of first conductive layers formed surrounding the block insulating film and disposed at a predetermined interval in the stacking direction. The first semiconductor layer comprises carbon-doped silicon and being formed to have different carbon concentrations in upper and lower portions in the stacking direction.

摘要翻译： 存储器串包括：第一半导体层，其形成为在垂直于衬底的层叠方向上延伸的柱状; 形成在所述第一半导体层的侧面周围的隧道绝缘膜; 形成在隧道绝缘膜周围的电荷蓄积膜，其能够积累电荷; 形成在电荷累积膜周围的块绝缘膜; 以及多个第一导电层，其形成为围绕所述块绝缘膜并且以堆叠方向以预定间隔设置。 第一半导体层包括碳掺杂硅并且被形成为在堆叠方向上的上部和下部具有不同的碳浓度。

公开(公告)号：US09293470B2

公开(公告)日：2016-03-22

申请号：US14491107

申请日：2014-09-19

申请人： Kabushiki Kaisha Toshiba

发明人： Haruka Sakuma ,  Kiwamu Sakuma ,  Masahiro Kiyotoshi

IPC分类号： H01L27/115 ,  H01L27/02 ,  H01L29/423 ,  H01L29/66 ,  H01L29/792

CPC分类号： H01L27/1157 ,  B82Y10/00 ,  H01L27/11578 ,  H01L29/0673 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/792

摘要： Stack structures are arranged in a first direction horizontal to a semiconductor substrate, one of which has a longitudinal direction along a second direction. One stack structure has a plurality of semiconductor layers stacked between interlayer insulating layers. A memory film is formed on side surfaces of the stack structures and includes a charge accumulation film of the memory cell. Conductive films are formed on side surfaces of the stack structures via the memory film. One stack structure has a shape increasing in width from above to below in a cross-section including the first and third directions. One conductive film has a shape increasing in width from above to below in a cross-section including the second and third directions. Predetermined portions in the semiconductor layers have different impurity concentrations between upper and lower semiconductor layers.

摘要翻译： 堆叠结构沿水平方向排列在半导体衬底的第一方向上，其中一个沿着第二方向具有纵向方向。 一个堆叠结构具有堆叠在层间绝缘层之间的多个半导体层。 存储膜形成在堆叠结构的侧表面上并且包括存储单元的电荷累积膜。 导电膜通过记忆膜形成在堆叠结构的侧表面上。 一个堆叠结构在包括第一和第三方向的横截面中具有从上到下的宽度增加的形状。 一个导电膜在包括第二和第三方向的横截面中具有从上到下的宽度增加的形状。 半导体层中的预定部分在上半导体层和下半导体层之间具有不同的杂质浓度。