公开(公告)号：US11088118B2

公开(公告)日：2021-08-10

申请号：US16464355

申请日：2017-11-30

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

发明人： Kazuyasu Takimoto ,  Yuta Ichikura ,  Toshiharu Ohbu ,  Hiroaki Ito ,  Naotake Watanabe ,  Nobumitsu Tada ,  Naoki Yamanari ,  Daisuke Hiratsuka ,  Hiroki Sekiya ,  Yuuji Hisazato ,  Naotaka Iio ,  Hitoshi Matsumura

IPC分类号： H01L25/07 ,  H01L23/367 ,  H01L23/50 ,  H01L25/18 ,  H01L29/06

摘要： According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.

公开(公告)号：US09795049B2

公开(公告)日：2017-10-17

申请号：US14626569

申请日：2015-02-19

申请人： Kabushiki Kaisha Toshiba

发明人： Nobumitsu Tada ,  Kazuya Kodani ,  Hiroaki Ito ,  Toshiharu Ohbu ,  Hitoshi Matsumura

IPC分类号： H05K7/14

CPC分类号： H05K7/1432 ,  H01L2224/40225

摘要： A semiconductor device includes a base plate, a semiconductor chip, and a first to a fourth terminal plates. The first terminal plate includes a first main body unit. The second terminal plate includes a second main body unit. The second main body unit opposes the first main body unit. The third terminal plate includes a third main body unit. The third main body unit opposes the first main body unit and the second main body unit. The fourth terminal plate includes a fourth main body unit. The fourth main body unit opposes the third main body unit. A thickness of the third main body unit is thinner than a thickness of the first main body unit. A thickness of the fourth main body unit is thinner than a thickness of the second main body unit.

公开(公告)号：US20160190032A1

公开(公告)日：2016-06-30

申请号：US14966577

申请日：2015-12-11

申请人： Kabushiki Kaisha Toshiba

发明人： Kazuya Kodani ,  Yuta Ichikura ,  Nobumitsu Tada ,  Hiroaki Ito ,  Toshiharu Ohbu ,  Taihei Koyama ,  Kazuaki Yuuki ,  Yosuke Nakazawa ,  Atsushi Yamamoto ,  Makoto Otani ,  Kazuhiro Ueda ,  Tomohiro Iguchi

IPC分类号： H01L23/367 ,  H05K1/03 ,  H05K1/09 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L23/367 ,  H01L23/3114 ,  H01L23/3731 ,  H01L23/473 ,  H01L23/49811 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K1/09 ,  H05K2201/10166 ,  H01L2924/00

摘要： According to an embodiment, a wiring board includes an insulating board including a heat transfer region made of silicon nitride and having a thickness in a range between 0.2 mm and 1 mm; and a wiring layer including a pad stacked on the heat transfer region and made of a metal material having a thickness of 1.5 mm or more.

摘要翻译： 根据实施例，布线板包括绝缘板，该绝缘板包括由氮化硅制成的厚度在0.2mm至1mm之间的传热区域; 以及布线层，其包括堆叠在传热区域上并由厚度为1.5mm以上的金属材料制成的焊盘。

公开(公告)号：US20160057881A1

公开(公告)日：2016-02-25

申请号：US14626569

申请日：2015-02-19

申请人： Kabushiki Kaisha Toshiba

发明人： Nobumitsu Tada ,  Kazuya Kodani ,  Hiroaki Ito ,  Toshiharu Ohbu ,  Hitoshi Matsumura

IPC分类号： H05K7/02

CPC分类号： H05K7/1432 ,  H01L2224/40225

摘要： A semiconductor device includes a base plate, a semiconductor chip, and a first to a fourth terminal plates. The first terminal plate includes a first main body unit. The second terminal plate includes a second main body unit. The second main body unit opposes the first main body unit. The third terminal plate includes a third main body unit. The third main body unit opposes the first main body unit and the second main body unit. The fourth terminal plate includes a fourth main body unit. The fourth main body unit opposes the third main body unit. A thickness of the third main body unit is thinner than a thickness of the first main body unit. A thickness of the fourth main body unit is thinner than a thickness of the second main body unit.

摘要翻译： 半导体器件包括基板，半导体芯片和第一至第四端子板。 第一端子板包括第一主体单元。 第二端子板包括第二主体单元。 第二主体单元与第一主体单元相对。 第三端子板包括第三主体单元。 第三主体单元与第一主体单元和第二主体单元相对。 第四端子板包括第四主体单元。 第四主体单元与第三主体单元相反。 第三主体单元的厚度比第一主体单元的厚度薄。 第四主体单元的厚度比第二主体单元的厚度薄。