利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.042 秒)

    Heat sink layer
    5.
    发明授权
    Heat sink layer 有权
    散热层

    公开(公告)号：US08576672B1

    公开(公告)日：2013-11-05

    申请号：US13481207

    申请日：2012-05-25

    申请人： Chubing Peng ,  Edward Charles Gage ,  Ganping Ju ,  Jan-Ulrich Thiele ,  Kaizhong Gao

    发明人： Chubing Peng ,  Edward Charles Gage ,  Ganping Ju ,  Jan-Ulrich Thiele ,  Kaizhong Gao

    IPC分类号： G11B11/00

    CPC分类号： G11B5/7325 ,  G11B2005/0021

    摘要： A layer configured for use in a magnetic stack has electrical resistivity greater than about 5×10−8 Ωm and thermal conductivity greater than about 1 W/mK. In some arrangements, the magnetic stack includes a substrate with the layer disposed over the substrate, a magnetic recording layer disposed over the layer, and a thermal resist layer disposed between the layer and the magnetic recording layer. In some arrangements, the layer is configured to function as a heat sink and a soft under layer. A system that incorporates the layer can include a magnetic write pole, a near field transducer (NFT) positioned proximate the write pole that radiates energy.

    摘要翻译： 配置用于磁性堆叠的层具有大于约5×10 -8Ωgam的电阻率和大于约1W / mK的热导率。 在一些布置中，磁性堆叠包括具有设置在衬底上的层的衬底，设置在层上的磁记录层，以及设置在层和磁记录层之间的热阻层。 在一些布置中，该层被配置为用作散热器和软底层。 结合该层的系统可以包括磁性写入磁极，靠近写入磁极的辐射能量的近场传感器（NFT）。

    Perpendicular magnetic recording medium and system with low-curie-temperature multilayer for heat-assisted writing and/or reading
    7.
    发明授权
    Perpendicular magnetic recording medium and system with low-curie-temperature multilayer for heat-assisted writing and/or reading 有权
    垂直磁记录介质和具有低Curie-temperature多层的系统，用于热辅助写入和/或读取

    公开(公告)号：US07862912B2

    公开(公告)日：2011-01-04

    申请号：US12041930

    申请日：2008-03-04

    申请人： Olav Hellwig ,  Bruce David Terris ,  Jan-Ulrich Thiele

    发明人： Olav Hellwig ,  Bruce David Terris ,  Jan-Ulrich Thiele

    IPC分类号： G11B5/66

    CPC分类号： G11B5/66 ,  Y10T428/1171

    摘要： A perpendicular magnetic recording medium, usable for either continuous or patterned media, has a recording layer structure (RLS) of first and second perpendicular magnetic layers (PM1, PM2) and an antiferromagnetically coupling (AFC) layer and a ferromagnetic switching layer (SWL) between PM1 and PM2. The magnetic recording system uses heat to assist in the reading and/or writing of data. The SWL is a Co/Ni multilayer with a Curie temperature (TC-SWL) less than the Curie temperatures of PM1 and PM2. At room temperature, there is ferromagnetic coupling between SWL and the upper ferromagnetic layer (PM2) so that the magnetizations of SWL and PM2 are parallel, and antiferromagnetic coupling between SWL and the lower ferromagnetic layer (PM1) across the AFC layer so that the magnetization of PM1 is aligned antiparallel to the magnetizations of SWL and PM2. When the SWL is heated to above TC-SWL it is no longer ferromagnetic, there is no antiferromagnetic coupling between the SWL and PM1 across the AFC layer, and the magnetizations of PM1 and PM2 become aligned parallel.

    摘要翻译： 可用于连续或图案化介质的垂直磁记录介质具有第一和第二垂直磁性层（PM1，PM2）和反铁磁耦合（AFC）层和铁磁性切换层（SWL）的记录层结构（RLS） PM1和PM2之间。 磁记录系统使用热量来辅助读取和/或写入数据。 SWL是具有低于PM1和PM2的居里温度的居里温度（TC-SWL）的Co / Ni多层。 在室温下，在SWL和上铁磁层（PM2）之间存在铁磁耦合，使得SWL和PM2的磁化平行，并且SWL与AFC层之间的下铁磁层（PM1）之间的反铁磁耦合，使得磁化 的PM1与SWL和PM2的磁化反平行排列。 当SWL被加热到高于TC-SWL时，它不再是铁磁性的，在AFC层之间的SWL和PM1之间没有反铁磁耦合，并且PM1和PM2的磁化平行排列。

    PERPENDICULAR MAGNETIC RECORDING MEDIUM AND SYSTEM WITH LOW-CURIE-TEMPERATURE MULTILAYER FOR HEAT-ASSISTED WRITING AND/OR READING
    8.
    发明申请
    PERPENDICULAR MAGNETIC RECORDING MEDIUM AND SYSTEM WITH LOW-CURIE-TEMPERATURE MULTILAYER FOR HEAT-ASSISTED WRITING AND/OR READING 有权
    具有低温度温度的多层磁性记录介质和系统，用于热辅助写入和/或读取

    公开(公告)号：US20090226762A1

    公开(公告)日：2009-09-10

    申请号：US12041930

    申请日：2008-03-04

    申请人： Olav Hellwig ,  Bruce David Terris ,  Jan-Ulrich Thiele

    发明人： Olav Hellwig ,  Bruce David Terris ,  Jan-Ulrich Thiele

    IPC分类号： G11B5/65

    CPC分类号： G11B5/66 ,  Y10T428/1171

    摘要： A perpendicular magnetic recording medium, usable for either continuous or patterned media, has a recording layer structure (RLS) of first and second perpendicular magnetic layers (PM1, PM2) and an antiferromagnetically coupling (AFC) layer and a ferromagnetic switching layer (SWL) between PM1 and PM2. The magnetic recording system uses heat to assist in the reading and/or writing of data. The SWL is a Co/Ni multilayer with a Curie temperature (TC-SWL) less than the Curie temperatures of PM1 and PM2. At room temperature, there is ferromagnetic coupling between SWL and the upper ferromagnetic layer (PM2) so that the magnetizations of SWL and PM2 are parallel, and antiferromagnetic coupling between SWL and the lower ferromagnetic layer (PM1) across the AFC layer so that the magnetization of PM1 is aligned antiparallel to the magnetizations of SWL and PM2. When the SWL is heated to above TC-SWL it is no longer ferromagnetic, there is no antiferromagnetic coupling between the SWL and PM1 across the AFC layer, and the magnetizations of PM1 and PM2 become aligned parallel.

    摘要翻译： 可用于连续或图案化介质的垂直磁记录介质具有第一和第二垂直磁性层（PM1，PM2）和反铁磁耦合（AFC）层和铁磁性切换层（SWL）的记录层结构（RLS） PM1和PM2之间。 磁记录系统使用热量来辅助读取和/或写入数据。 SWL是具有低于PM1和PM2的居里温度的居里温度（TC-SWL）的Co / Ni多层。 在室温下，在SWL和上铁磁层（PM2）之间存在铁磁耦合，使得SWL和PM2的磁化平行，并且SWL与AFC层之间的下铁磁层（PM1）之间的反铁磁耦合，使得磁化 的PM1与SWL和PM2的磁化反平行排列。 当SWL被加热到高于TC-SWL时，它不再是铁磁性的，在AFC层之间的SWL和PM1之间没有反铁磁耦合，并且PM1和PM2的磁化平行排列。

    MEMORY ARRAY HAVING MEMORY CELLS FORMED FROM METALLIC MATERIAL
    10.
    发明申请
    MEMORY ARRAY HAVING MEMORY CELLS FORMED FROM METALLIC MATERIAL 有权
    具有从金属材料形成的记忆细胞的记忆阵列

    公开(公告)号：US20070253243A1

    公开(公告)日：2007-11-01

    申请号：US11380498

    申请日：2006-04-27

    申请人： Robert Fontana ,  Eric Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    发明人： Robert Fontana ,  Eric Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  G11C11/1675

    摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.

    摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。