Thin film structure with decreased C-axis distribution
    5.
    发明申请
    Thin film structure with decreased C-axis distribution 审中-公开
    具有减小的C轴分布的薄膜结构

    公开(公告)号:US20070059564A1

    公开(公告)日:2007-03-15

    申请号:US11226634

    申请日:2005-09-14

    IPC分类号: G11B5/64 B32B3/28 G11B5/706

    摘要: A thin film structure in the form of, for example, a magnetic recording medium having a deceased C-axis distribution is provided. The structure includes a substrate having a first surface and a second surface non-parallel to the first surface, a seed layer overlying the first surface and the second surface of the substrate and a magnetic material layer on the seed layer. The magnetic material layer has a C-axis tilted with respect to an axis perpendicular to the magnetic material layer, i.e., a surface normal of the magnetic material layer. The seed layer has a columnar structure oriented generally perpendicular to either the first surface or the second surface of the substrate. The columnar structure of the seed layer acts as a template to epitaxial growth.

    摘要翻译: 提供了例如具有已故C轴分布的磁记录介质形式的薄膜结构。 该结构包括具有第一表面和不平行于第一表面的第二表面的衬底,覆盖衬底的第一表面和第二表面的种子层和种子层上的磁性材料层。 磁性材料层具有相对于垂直于磁性材料层的轴倾斜的C轴,即磁性材料层的表面法线。 种子层具有大致垂直于衬底的第一表面或第二表面定向的柱状结构。 种子层的柱状结构作为外延生长的模板。

    System, method and aperture for oblique deposition
    6.
    发明申请
    System, method and aperture for oblique deposition 审中-公开
    倾斜沉积的系统,方法和孔径

    公开(公告)号:US20050066897A1

    公开(公告)日:2005-03-31

    申请号:US10673795

    申请日:2003-09-29

    IPC分类号: C23C14/04 C23C14/22 C23C16/00

    摘要: A deposition system including a shadow mask with one or more apertures, and a method are described for oblique deposition of tilted thin films with azimuthal symmetry. The deposition system is used with physical vapor deposition processes to provide improved control of the angle of incidents of the flux combined with rotation of the substrate to create titled thin films with improved properties compared to conventional oblique deposition techniques.

    摘要翻译: 描述了包括具有一个或多个孔的荫罩的沉积系统,以及用于倾斜沉积具有方位角对称性的倾斜薄膜的方法。 沉积系统与物理气相沉积工艺一起使用,以提供与基板旋转相结合的焊剂事件角度的改进控制,以产生与常规斜沉积技术相比具有改进性能的标题薄膜。

    Magneto-elastic anisotropy assisted thin film structure
    7.
    发明申请
    Magneto-elastic anisotropy assisted thin film structure 有权
    磁弹各向异性辅助薄膜结构

    公开(公告)号:US20060222904A1

    公开(公告)日:2006-10-05

    申请号:US11265031

    申请日:2005-11-02

    IPC分类号: G11B5/66 B05D5/12

    摘要: A thin film structure, such as a magnetic recording media, having a magnetic layer and a stress-effecting layer is disclosed. The stress-effecting layer induces a magneto-elastic anisotropy in the magnetic layer. The stress-effecting layer can be activated by the application of an external stress and/or strain. The induced magneto-elastic anisotropy can transiently achieve and/or enhance a tilt angle of the medium. The medium can be a perpendicular magnetic recording medium, a longitudinal magnetic recording medium and/or a tilted magnetic recording medium. The magnetic recording media is suitable for use with a data storage system, such as a HAMR data storage system.

    摘要翻译: 公开了具有磁性层和应力效应层的薄膜结构,例如磁记录介质。 应力影响层在磁性层中引起磁弹性各向异性。 应力影响层可以通过施加外部应力和/或应变来激活。 感应磁弹性各向异性可以瞬时实现和/或增强介质的倾斜角。 介质可以是垂直磁记录介质,纵向磁记录介质和/或倾斜磁记录介质。 磁记录介质适用于数据存储系统,例如HAMR数据存储系统。

    Thin film structure having a soft magnetic interlayer
    8.
    发明申请
    Thin film structure having a soft magnetic interlayer 审中-公开
    具有软磁性中间层的薄膜结构

    公开(公告)号:US20060291100A1

    公开(公告)日:2006-12-28

    申请号:US11159500

    申请日:2005-06-23

    IPC分类号: G11B5/127 G11B5/82

    CPC分类号: G11B5/667 G11B5/7379

    摘要: A thin film structure that includes a hard magnetic recording layer, a soft magnetic underlayer and an intermediate layer between the hard magnetic recording layer and the soft magnetic underlayer is disclosed. The intermediate layer comprises a soft magnetic interlayer, and a non-magnetic interlayer between the soft magnetic interlayer and the hard magnetic recording layer. The thin film structure can be a recording medium. The soft magnetic interlayer can be crystalline.

    摘要翻译: 公开了一种薄膜结构,其包括硬磁记录层,软磁性底层和硬磁记录层与软磁性底层之间的中间层。 中间层包括软磁中间层和软磁中间层和硬磁记录层之间的非磁性中间层。 薄膜结构可以是记录介质。 软磁中间层可以是结晶的。