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公开(公告)号：US06372520B1
公开(公告)日：2002-04-16
申请号：US09113594
申请日：1998-07-10
IPC分类号： H01L2100
CPC分类号： H01L21/02233 , H01L21/02238 , H01L21/28176 , H01L21/28185 , H01L21/28211 , H01L21/3105
摘要： A method and apparatus for repairing and improving the endurance characteristics of process damaged oxide film formed in a semiconductor device involving sonic annealing by vibrating or oscillating a wafer at a predetermined frequency, wave amplitude, and duration. A signal from a frequency generator is amplified by a voltage amplifier and then sent to a speaker or other acoustic device for the production of vibrating acoustical wave energy. This acoustical wave energy is then directed at a submicron device wafer during a specified time period in order to anneal the gate oxide and, thereby, improve the characteristics of the oxide film.
摘要翻译： 一种通过以预定频率，波幅和持续时间振荡或振荡晶片来修复和改善在包括声波退火的半导体器件中形成的工艺损坏氧化膜的耐久性的方法和装置。 来自频率发生器的信号由电压放大器放大，然后发送到扬声器或其他声学装置以产生振动声波能量。 然后将该声波能量在指定的时间段内引导到亚微米器件晶片，以便退火栅极氧化物，从而改善氧化物膜的特性。
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公开(公告)号：US4683554A
公开(公告)日：1987-07-28
申请号：US775980
申请日：1985-09-13
IPC分类号： G11C17/00 , G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , G11C11/40
CPC分类号： G11C16/0433 , H01L27/115 , H01L29/7882 , H01L29/7883
摘要： A floating gate type nonvolatile memory cell of the general class known as electrically erasable programmable read only memories, configured with a single polysilicon layer, operable in a direct write mode, and characterized by its absence of read disturb. In one form of its practice, the floating gate is divided into three regions situated with relation to specified regions in the substrate. The first region of the floating gate is dielectrically isolated from a conductively doped region in the substrate so as to form a capacitor; the second region is similarly situated, but forms a significantly smaller capacitor and utilizes a dielectric suitable for Fowler-Nordheim tunneling or Poole-Frenkel conduction of charge therethrough; and the third region overlaps a channel of a field effect type sense transistor, conduction through which is responsive to the charge resident on the floating gate. Access to the substrate regions is by way of three electrically independent but simultaneously enabled access transistors. Writing of data is accomplished by the division of voltage between capacitors, while reading is accomplished by detecting the conductive state of the sense transistor in an electrically independent conductive path.
摘要翻译： 被称为电可擦除可编程只读存储器的浮动型非易失性存储器单元，配置为具有可直接写入模式操作的单个多晶硅层，并且其特征在于其不存在读取干扰。 在其实践的一种形式中，浮动栅极被分为与衬底中的特定区域相关的三个区域。 浮置栅极的第一区域与衬底中的导电掺杂区域介电地隔离以形成电容器; 第二区域类似地定位，但是形成明显更小的电容器，并且利用适合于Fowler-Nordheim隧道或Poole-Frenkel的电介质穿过其中的电荷; 并且第三区域与场效应型读出晶体管的沟道重叠，通过该沟道响应驻留在浮置栅极上的电荷。 通过三个电独立但同时使能的存取晶体管访问衬底区域。 数据的写入是通过电容器之间的电压分压来实现的，而读取是通过在电独立的导电路径中检测感测晶体管的导通状态而实现的。
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