公开(公告)号：US5527200A

公开(公告)日：1996-06-18

申请号：US163818

申请日：1993-12-08

Applicant: Kang-ok Lee ,  Cheon-kyu Lee

Inventor： Kang-ok Lee ,  Cheon-kyu Lee

IPC: H01J1/304 ,  H01J9/02 ,  H01L21/46 ,  H01J9/12

CPC classification number: H01J1/3042 ,  H01J9/025

Abstract: There is disclosed a silicon field emission emitter and a method for making a silicon field emission emitter which has a good electronic characteristic and a simplified making process. The silicon field emission emitter in accordance with the embodiment of the present invention includes a silicon substrate of high density, an insulating layer on the silicon substrate of high density, a cavity formed in the insulating layer, an emitter formed with the silicon substrate of high density in a body in the cavity, and a gate electrode formed on the insulating layer. The insulating layer is made of the thermal oxide film having the thickness of 4000 angstroms and the gate electrode coats the emitter tip.

Abstract translation: 公开了一种硅场致发射体和制造具有良好电子特性和简化制作工艺的硅场致发射体的方法。 根据本发明的实施例的硅场发射发射器包括高密度的硅衬底，高密度的硅衬底上的绝缘层，在绝缘层中形成的腔，形成有高硅衬底的发射极 空腔中的体内的密度，以及形成在绝缘层上的栅电极。 绝缘层由厚度为4000埃的热氧化膜制成，栅电极覆盖发射极尖端。