公开(公告)号：US20070158728A1

公开(公告)日：2007-07-12

申请号：US11692473

申请日：2007-03-28

申请人： Kangguo Cheng ,  Ramachandra Divakaruni ,  C.Y. Sung

发明人： Kangguo Cheng ,  Ramachandra Divakaruni ,  C.Y. Sung

IPC分类号： H01L29/94

CPC分类号： H01L27/10876 ,  H01L27/0207 ,  H01L27/10864 ,  H01L27/1087 ,  H01L29/945

摘要： A buried plate region for a semiconductor memory storage capacitor is self aligned with respect to an upper portion of a deep trench containing the memory storage capacitor.

摘要翻译： 用于半导体存储器存储电容器的掩埋板区域相对于包含存储器存储电容器的深沟槽的上部自对准。

公开(公告)号：US20050026363A1

公开(公告)日：2005-02-03

申请号：US10604565

申请日：2003-07-30

申请人： Kangguo Cheng ,  Ramachandra Divakaruni ,  C.Y. Sung

发明人： Kangguo Cheng ,  Ramachandra Divakaruni ,  C.Y. Sung

IPC分类号： H01L27/108 ,  H01L21/336 ,  H01L21/8242 ,  H01L27/02

CPC分类号： H01L27/10876 ,  H01L27/0207 ,  H01L27/10864 ,  H01L27/1087 ,  H01L29/945

摘要： A method and structure for a memory storage cell in a semiconductor substrate includes forming a dopant source material over a lower portion of a deep trench formed in the substrate. An upper portion of the trench is shaped to a generally rectangular configuration, and the dopant source material is annealed so as to form a buried plate of a trench capacitor. The buried plate is self aligned to the shaped upper portion of the trench.

摘要翻译： 半导体衬底中的存储单元的方法和结构包括在衬底中形成的深沟槽的下部形成掺杂剂源材料。 沟槽的上部被成形为大致矩形的构造，并且掺杂剂源材料被退火以形成沟槽电容器的掩埋板。 掩埋板与沟槽的成形上部自对准。