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1.发明授权公开(公告)号：US09219216B2
公开(公告)日：2015-12-22
申请号：US13880450
申请日：2011-11-18
申请人： Takaaki Higashida , Kaori Toyoda , Takashi Kubo , Yoshihisa Ohido , Nobuaki Hirata , Yasushi Taniguchi
发明人： Takaaki Higashida , Kaori Toyoda , Takashi Kubo , Yoshihisa Ohido , Nobuaki Hirata , Yasushi Taniguchi
摘要： The present invention provides a thermoelectric conversion element, a thermoelectric conversion element module, and a method of manufacturing the same that can easily realize high-density arrangement of thermoelectric conversion elements and securement of connection reliability. The thermoelectric conversion element has, for example, rod-shaped thermoelectric conversion material, tube that has an insulation property and an adiabatic property and houses thermoelectric conversion material, and electrodes that are in close adhesion to the end surfaces of thermoelectric conversion material and tube. A surface roughness Ra of the end surfaces is larger than 0.8 micrometers. In the present invention, the thermoelectric conversion elements can be arranged at a high density such that tubes are in close adhesion to each other. Also, since the close adhesion surface of electrodes on the end surfaces is large, the connection reliability of electrodes is further improved.
摘要翻译： 本发明提供一种热电转换元件，热电转换元件模块及其制造方法，其可以容易地实现热电转换元件的高密度排列并确保连接可靠性。 热电转换元件具有例如棒状热电转换材料，具有绝缘性能和绝热性并容纳热电转换材料的管以及与热电转换材料和管的端面密合的电极。 端面的表面粗糙度Ra大于0.8微米。 在本发明中，热电转换元件可以以高密度布置，使得管彼此紧密附着。 此外，由于端面上的电极的紧密附着面积大，电极的连接可靠性进一步提高。
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公开(公告)号：US09219214B2
公开(公告)日：2015-12-22
申请号：US13978221
申请日：2012-01-23
申请人： Kaori Toyoda , Takaaki Higashida , Yoshihisa Ohido , Takashi Kubo
发明人： Kaori Toyoda , Takaaki Higashida , Yoshihisa Ohido , Takashi Kubo
摘要： The invention provides a thermoelectric conversion element having a lot of pn junction pairs per unit area and having a thermoelectric material chip which is hardly broken, and a producing method thereof. In the thermoelectric conversion element of the invention, plural substrates in each of which a film-shaped thermoelectric material is formed in a surface thereof are disposed. As a result, because the number of pn junction pairs per unit area is increased, a high output can be obtained. Because the thermoelectric material is formed into the film shape, reliability degradation caused by a breakage of the thermoelectric material can be prevented, even in the thermoelectric material having many pn junction pairs per unit area, namely, a sectional area is small.
摘要翻译： 本发明提供一种热电转换元件及其制造方法，该热电转换元件每单位面积具有大量pn结对，并且具有几乎不破损的热电材料芯片。 在本发明的热电转换元件中，设置有在其表面形成有膜状的热电材料的多个基板。 结果，由于每单位面积的pn结对的数量增加，所以可以获得高的输出。 由于热电材料形成为膜状，所以即使在每单位面积具有多个pn结对的热电材料即截面积小的情况下，也能够防止热电材料破损引起的可靠性降低。
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公开(公告)号：US20130284228A1
公开(公告)日：2013-10-31
申请号：US13978221
申请日：2012-01-23
申请人： Kaori Toyoda , Takaaki Higashida , Yoshihisa Ohido , Takashi Kubo
发明人： Kaori Toyoda , Takaaki Higashida , Yoshihisa Ohido , Takashi Kubo
摘要： The invention provides a thermoelectric conversion element having a lot of pn junction pairs per unit area and having a thermoelectric material chip which is hardly broken, and a producing method thereof. In the thermoelectric conversion element of the invention, plural substrates in each of which a film-shaped thermoelectric material is formed in a surface thereof are disposed. As a result, because the number of pn junction pairs per unit area is increased, a high output can be obtained. Because the thermoelectric material is formed into the film shape, reliability degradation caused by a breakage of the thermoelectric material can be prevented, even in the thermoelectric material having many pn junction pairs per unit area, namely, a sectional area is small.
摘要翻译： 本发明提供一种热电转换元件及其制造方法，该热电转换元件每单位面积具有大量pn结对，并且具有几乎不破损的热电材料芯片。 在本发明的热电转换元件中，设置有在其表面形成有膜状的热电材料的多个基板。 结果，由于每单位面积的pn结对的数量增加，所以可以获得高的输出。 由于热电材料形成为膜状，所以即使在每单位面积具有多个pn结对的热电材料即截面积小的情况下，也能够防止热电材料破损引起的可靠性降低。
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4.发明申请公开(公告)号：US20130199593A1
公开(公告)日：2013-08-08
申请号：US13880450
申请日：2011-11-18
申请人： Takaaki Higashida , Kaori Toyoda , Takashi Kubo , Yoshihisa Ohido , Nobuaki Hirata , Yasushi Taniguchi
发明人： Takaaki Higashida , Kaori Toyoda , Takashi Kubo , Yoshihisa Ohido , Nobuaki Hirata , Yasushi Taniguchi
IPC分类号： H01L35/32
摘要： The present invention provides a thermoelectric conversion element, a thermoelectric conversion element module, and a method of manufacturing the same that can easily realize high-density arrangement of thermoelectric conversion elements and securement of connection reliability. The thermoelectric conversion element has, for example, rod-shaped thermoelectric conversion material, tube that has an insulation property and an adiabatic property and houses thermoelectric conversion material, and electrodes that are in close adhesion to the end surfaces of thermoelectric conversion material and tube. A surface roughness Ra of the end surfaces is larger than 0.8 micrometers. In the present invention, the thermoelectric conversion elements can be arranged at a high density such that tubes are in close adhesion to each other. Also, since the close adhesion surface of electrodes on the end surfaces is large, the connection reliability of electrodes is further improved.
摘要翻译： 本发明提供一种热电转换元件，热电转换元件模块及其制造方法，其可以容易地实现热电转换元件的高密度排列并确保连接可靠性。 热电转换元件具有例如棒状热电转换材料，具有绝缘性能和绝热性并容纳热电转换材料的管以及与热电转换材料和管的端面密合的电极。 端面的表面粗糙度Ra大于0.8微米。 在本发明中，热电转换元件可以以高密度布置，使得管彼此紧密附着。 此外，由于端面上的电极的紧密附着面积大，电极的连接可靠性进一步提高。
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公开(公告)号：US09105803B2
公开(公告)日：2015-08-11
申请号：US13635962
申请日：2011-06-17
IPC分类号： H01L31/18 , H01L31/0368
CPC分类号： H01L31/182 , H01L31/03682 , Y02E10/546 , Y02P70/521
摘要： Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.
摘要翻译： 公开了通过以简单的方式形成具有PN结的多晶硅膜，可以以低成本生产的多晶硅系太阳能电池。 具体地，通过使用含掺杂剂的硅靶溅射制造的非晶硅膜通过等离子体多晶化，并且在非晶硅膜中形成PN结，从而制造具有PN结的多晶硅膜。 具有PN结的多晶硅膜用作多晶硅太阳能电池的硅衬底。 还公开了一种从硅锭生产含掺杂剂的硅靶的技术。
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