公开(公告)号：US4362503A

公开(公告)日：1982-12-07

申请号：US269538

申请日：1981-06-03

申请人： Karl Eiring ,  Bernhard Loffler

发明人： Karl Eiring ,  Bernhard Loffler

IPC分类号： F27B7/40 ,  F27D15/02 ,  F27B7/02

CPC分类号： F27B7/40

摘要： A planetary cooler has a plurality of circumferentially spaced cooling tube supports each of whichhas a pair of axially spaced side plates and an insert with two flanges which are fitted into openings in the side plates and welded to the latter. Each flange has a pyriform opening which communicates with a radial clearance extending between circumferentially adjacent side plates at their radially outer portions.

摘要翻译： 行星式冷却器具有多个周向间隔开的冷却管支撑件，每个冷却管支架具有一对轴向间隔开的侧板和具有两个凸缘的插入件，该两个凸缘装配在侧板中的开口中并焊接到侧板上。 每个凸缘具有一个开口，该开口与径向间隙连通，径向间隙在其径向外侧部分周向相邻的侧板之间延伸。

公开(公告)号：US4045161A

公开(公告)日：1977-08-30

申请号：US632997

申请日：1975-11-18

申请人： Hans Mollenkopf ,  Jurgen Wurr ,  Antonius Vering ,  Bernhard Loffler ,  Karl Eiring

发明人： Hans Mollenkopf ,  Jurgen Wurr ,  Antonius Vering ,  Bernhard Loffler ,  Karl Eiring

IPC分类号： F27D15/02 ,  F27B7/40 ,  F27B7/38

CPC分类号： F27B7/40

摘要： A rotary kiln having a row of planetary cooler tubes disposed around its outer periphery and carried by individual metal mountings on the kiln casing, adjacent mountings abutting against each other in their areas bordering on the kiln casing and being spaced apart in their areas remote from the kiln casing, for minimizing changing temperature induced stresses imparted therefrom to the kiln casing during operation.

摘要翻译： 一种回转窑，其具有一排行星式冷却器管，该排行星式冷却器管设置在其外周围并由窑壳上的各个金属安装件承载，相邻安装件在与窑壳体接壤的区域中彼此邻接并且在远离 窑壳，用于最小化在操作期间由其施加到窑壳的变化的温度诱导应力。

公开(公告)号：US20070224748A1

公开(公告)日：2007-09-27

申请号：US11687187

申请日：2007-03-16

申请人： Georg Rohrer ,  Bernhard Loffler ,  Jochen Kraft

发明人： Georg Rohrer ,  Bernhard Loffler ,  Jochen Kraft

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L29/66712 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/0821 ,  H01L29/0878 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/7809

摘要： A semiconductor body includes a substrate, a buried zone having a first conductivity type that is formed in the substrate, a first zone having the first conductivity type that is above the buried zone, a second zone having a second conductivity type that is different from the first conductivity type and above the first zone, and a third zone having the first conductivity type that is above the second zone. The buried zone includes first and second implantation regions that are formed via first and second implantations that are performed using a mask. The buried zone, the first zone, the second zone and the third zone are parts of a first transistor structure.

摘要翻译： 半导体本体包括衬底，具有形成在衬底中的第一导电类型的掩埋区，具有位于掩埋区之上的第一导电类型的第一区，具有与第二导电类型不同的第二区， 第一导电类型和第一区以上，以及具有高于第二区的第一导电类型的第三区。 掩埋区包括通过使用掩模执行的第一和第二注入形成的第一和第二注入区。 埋置区，第一区，第二区和第三区是第一晶体管结构的一部分。

公开(公告)号：US20080290445A1

公开(公告)日：2008-11-27

申请号：US12148446

申请日：2008-04-17

申请人： Martin Knaipp ,  Bernhard Loffler

发明人： Martin Knaipp ,  Bernhard Loffler

IPC分类号： H01L29/00 ,  H01L21/76

CPC分类号： H01L21/76235 ,  H01L21/76205

摘要： A method for manufacturing a semiconductor body with a trench comprises the steps of etching the trench (11) in the semiconductor body (10) and forming a silicon oxide layer (12) on at least one side wall (14) of the trench (11) and on the bottom (15) of the trench (11) by means of thermal oxidation. Furthermore, the silicon oxide layer (12) on the bottom (15) of the trench (11) is removed and the trench (11) is filled with polysilicon that forms a polysilicon body (13).

摘要翻译： 用于制造具有沟槽的半导体本体的方法包括以下步骤：蚀刻半导体本体（10）中的沟槽（11）并在沟槽（11）的至少一个侧壁（14）上形成氧化硅层 ）并且通过热氧化在沟槽（11）的底部（15）上。 此外，除去沟槽（11）的底部（15）上的氧化硅层（12），并且用形成多晶硅体（13）的多晶硅填充沟槽（11）。

公开(公告)号：US20080277749A1

公开(公告)日：2008-11-13

申请号：US11884805

申请日：2006-01-31

申请人： Hubert Enichlmair ,  Jochen Kraft ,  Bernhard Loffler ,  Gerald Meinhardt ,  Georg Rohrer ,  Ewald Wachmann

发明人： Hubert Enichlmair ,  Jochen Kraft ,  Bernhard Loffler ,  Gerald Meinhardt ,  Georg Rohrer ,  Ewald Wachmann

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/1105

摘要： A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate.

摘要翻译： 一种感光元件，其在薄的相对高掺杂的外延层和相对轻掺杂的半导体衬底之间具有半导体结。 在光入射窗外部，绝缘层布置在外延层和半导体衬底之间。 在这种情况下，外延层的厚度小于50nm，结果入射到入射窗中的光量子的大部分可以在轻掺杂半导体衬底中被吸收。

公开(公告)号：US3975147A

公开(公告)日：1976-08-17

申请号：US577197

申请日：1975-05-14

申请人： Antonius Vering ,  Bernhard Loffler

发明人： Antonius Vering ,  Bernhard Loffler

IPC分类号： F27B7/40 ,  F27B7/02 ,  F27B7/38

CPC分类号： F27B7/40

摘要： This invention relates to a rotary kiln for the heat treatment of material and having a number of elongate satellite cooling tubes distributed uniformly around the rotary kiln periphery at the exit end of the kiln, the inlet ends of these tubes being connected by short inlet pipes to the interior of the rotary kiln, and each tube being supported on the rotary kiln casing by two support bearings which accommodate axial movement of the tubes relative to the kiln occasioned by thermal expansion or contraction of the tubes. Mounting of the bearing means accommodates a close spacing between adjacent tubes.

摘要翻译： 本发明涉及一种用于热处理材料的回转窑，并且在窑出口处围绕回转窑周边均匀地分布有多个细长卫星冷却管，这些管的入口端通过短入口管连接， 回转窑的内部，并且每个管通过两个支撑轴承支撑在回转窑壳上，该支撑轴承适应管相对于通过管的热膨胀或收缩引起的相对于窑的轴向移动。 轴承装置的安装容纳相邻管之间的紧密间隔。