公开(公告)号：US20080277749A1

公开(公告)日：2008-11-13

申请号：US11884805

申请日：2006-01-31

申请人： Hubert Enichlmair ,  Jochen Kraft ,  Bernhard Loffler ,  Gerald Meinhardt ,  Georg Rohrer ,  Ewald Wachmann

发明人： Hubert Enichlmair ,  Jochen Kraft ,  Bernhard Loffler ,  Gerald Meinhardt ,  Georg Rohrer ,  Ewald Wachmann

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/1105

摘要： A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate.

摘要翻译： 一种感光元件，其在薄的相对高掺杂的外延层和相对轻掺杂的半导体衬底之间具有半导体结。 在光入射窗外部，绝缘层布置在外延层和半导体衬底之间。 在这种情况下，外延层的厚度小于50nm，结果入射到入射窗中的光量子的大部分可以在轻掺杂半导体衬底中被吸收。

公开(公告)号：US08227882B2

公开(公告)日：2012-07-24

申请号：US11884805

申请日：2006-01-31

申请人： Hubert Enichlmair ,  Jochen Kraft ,  Bernhard Löffler ,  Gerald Meinhardt ,  Georg Röhrer ,  Ewald Wachmann

发明人： Hubert Enichlmair ,  Jochen Kraft ,  Bernhard Löffler ,  Gerald Meinhardt ,  Georg Röhrer ,  Ewald Wachmann

IPC分类号： H01L31/0232

CPC分类号： H01L31/1105

摘要： A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate.

摘要翻译： 一种感光元件，其在薄的相对高掺杂的外延层和相对轻掺杂的半导体衬底之间具有半导体结。 在光入射窗外部，绝缘层布置在外延层和半导体衬底之间。 在这种情况下，外延层的厚度小于50nm，结果入射到入射窗中的光量子的大部分可以在轻掺杂半导体衬底中被吸收。

公开(公告)号：US20080272413A1

公开(公告)日：2008-11-06

申请号：US11884642

申请日：2006-01-26

申请人： Hubert Enichlmair ,  Jochen Kraft ,  Georg Rohrer

发明人： Hubert Enichlmair ,  Jochen Kraft ,  Georg Rohrer

IPC分类号： H01L31/113

CPC分类号： H01L31/1136

摘要： In order to detect light with in particular a high blue component, the inversion zone and the space charge zone of a CMOS-like structure are used. In conjunction with an at least partly transparent gate electrode, in particular a transparent conductive oxide or a patterned gate electrode, it becomes possible to absorb the short-wave component of incident light within the inversion zone and to reliably conduct away the generated charge carrier pairs to first and second contacts. During operation, a control voltage is applied to the gate electrode with a magnitude that generates a continuous inversion zone below the optionally patterned gate electrode.

摘要翻译： 为了检测具有特别高的蓝色分量的光，使用CMOS类结构的反转区和空间电荷区。 结合至少部分透明的栅电极，特别是透明导电氧化物或图案化栅电极，可以吸收反转区内入射光的短波分量，并可靠地导出产生的电荷载体对 到第一和第二个联系人。 在操作期间，以栅极电极施加控制电压，该幅度在可选图案化的栅电极下方产生连续的反转区。

公开(公告)号：US20070224748A1

公开(公告)日：2007-09-27

申请号：US11687187

申请日：2007-03-16

申请人： Georg Rohrer ,  Bernhard Loffler ,  Jochen Kraft

发明人： Georg Rohrer ,  Bernhard Loffler ,  Jochen Kraft

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L29/66712 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/0821 ,  H01L29/0878 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/7809

摘要： A semiconductor body includes a substrate, a buried zone having a first conductivity type that is formed in the substrate, a first zone having the first conductivity type that is above the buried zone, a second zone having a second conductivity type that is different from the first conductivity type and above the first zone, and a third zone having the first conductivity type that is above the second zone. The buried zone includes first and second implantation regions that are formed via first and second implantations that are performed using a mask. The buried zone, the first zone, the second zone and the third zone are parts of a first transistor structure.

摘要翻译： 半导体本体包括衬底，具有形成在衬底中的第一导电类型的掩埋区，具有位于掩埋区之上的第一导电类型的第一区，具有与第二导电类型不同的第二区， 第一导电类型和第一区以上，以及具有高于第二区的第一导电类型的第三区。 掩埋区包括通过使用掩模执行的第一和第二注入形成的第一和第二注入区。 埋置区，第一区，第二区和第三区是第一晶体管结构的一部分。

公开(公告)号：US08796743B2

公开(公告)日：2014-08-05

申请号：US11884642

申请日：2006-01-26

申请人： Hubert Enichlmair ,  Jochen Kraft ,  Georg Röhrer

发明人： Hubert Enichlmair ,  Jochen Kraft ,  Georg Röhrer

IPC分类号： H01L27/148

CPC分类号： H01L31/1136

摘要： In order to detect light with in particular a high blue component, the inversion zone and the space charge zone of a CMOS-like structure are used. In conjunction with an at least partly transparent gate electrode, in particular a transparent conductive oxide or a patterned gate electrode, it becomes possible to absorb the short-wave component of incident light within the inversion zone and to reliably conduct away the generated charge carrier pairs to first and second contacts. During operation, a control voltage is applied to the gate electrode with a magnitude that generates a continuous inversion zone below the optionally patterned gate electrode.

摘要翻译： 为了检测具有特别高的蓝色分量的光，使用CMOS类结构的反转区和空间电荷区。 结合至少部分透明的栅电极，特别是透明导电氧化物或图案化栅电极，可以吸收反转区内入射光的短波分量，并可靠地导出产生的电荷载体对 到第一和第二个联系人。 在操作期间，以栅极电极施加控制电压，该幅度在可选图案化的栅电极下方产生连续的反转区。

公开(公告)号：US06562547B2

公开(公告)日：2003-05-13

申请号：US09727389

申请日：2000-12-01

申请人： Jochen Kraft ,  Martin Schatzmayr ,  Hubert Enichlmair

发明人： Jochen Kraft ,  Martin Schatzmayr ,  Hubert Enichlmair

IPC分类号： G03F736

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139

摘要： A method for producing structures in chips is realized by carrying out a sequence of structuring steps in a self-adjusting manner. By structuring a first auxiliary layer applied on a substrate, a first masking structure is formed after a first masking procedure, which first masking structure has at least one partial region projecting beyond the surface of the substrate. After this, a further structuring step is carried out, for instance, by etching, implantation or CVD, using the previously produced first masking structure as a mask. After this, the first masking structure with a view to forming a second masking structure is inverted by applying at least one second auxiliary layer onto the first masking structure. The thus formed structure is at least partially taken off and the thus denuded first auxiliary layer is selectively removed, whereupon the second masking structure is used as a mask for a further structuring step.

摘要翻译： 通过以自调节方式执行一系列结构化步骤来实现芯片中的结构的制造方法。 通过构造施加在衬底上的第一辅助层，在第一掩模程序之后形成第一掩蔽结构，该第一掩模结构具有突出超过衬底表面的至少一个部分区域。 之后，使用先前制造的第一掩蔽结构作为掩模，例如通过蚀刻，注入或CVD来进行进一步的结构化步骤。 此后，通过将至少一个第二辅助层施加到第一掩模结构上，来形成第二掩模结构以形成第一掩模结构。 这样形成的结构至少部分地脱落，并且因此被剥离的第一辅助层被选择性地去除，于是第二掩模结构用作进一步结构化步骤的掩模。

公开(公告)号：US20100038678A1

公开(公告)日：2010-02-18

申请号：US11922255

申请日：2006-04-28

申请人： Jochen Kraft ,  Bernhard Löffler ,  Gerald Meinhardt

发明人： Jochen Kraft ,  Bernhard Löffler ,  Gerald Meinhardt

IPC分类号： H01L29/861 ,  H01L21/24 ,  H01L31/08 ,  H01L31/101

CPC分类号： H01L31/1812 ,  H01L31/1035 ,  Y02E10/50

摘要： A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced.

摘要翻译： 其中在形成在晶体半导体衬底的表面中的掺杂区域（DG）和沉积在所述掺杂区域之上的半导体层（HS）之间形成pn结的光电二极管。 在掺杂区域的边缘区域中提供了另外的掺杂（GD），通过该掺杂区域，附加的pn结掺杂更深地移动到衬底（SU）中。 由于以这种方式实现的pn结与相位边界处的缺陷的距离更大，所以光电二极管内的暗电流减小。

公开(公告)号：US20070269953A1

公开(公告)日：2007-11-22

申请号：US10593141

申请日：2005-01-19

申请人： Gerald Meinhardt ,  Jochen Kraft

发明人： Gerald Meinhardt ,  Jochen Kraft

IPC分类号： H01L21/331

CPC分类号： H01L29/66242 ,  H01L29/66287

摘要： For the production of an improved bipolar transistor comprising a low-resistance base terminal, a dielectric layer is deposited over the semiconductor substrate and is highly doped via an implantation mask. In a subsequent controlled thermal step, the dopant is then indiffused into the semiconductor substrate from the dielectric layer serving as a dopant repository. This gives rise to a low-resistance region with which the extrinsic base can be defined carefully.

摘要翻译： 为了制造包括低电阻基极的改进的双极晶体管，介电层沉积在半导体衬底上，并通过注入掩模进行高度掺杂。 在随后的受控热步骤中，掺杂剂然后从用作掺杂剂储存库的介电层扩散到半导体衬底中。 这产生了可以仔细定义外在基极的低电阻区域。

公开(公告)号：US08134179B2

公开(公告)日：2012-03-13

申请号：US11922255

申请日：2006-04-28

申请人： Jochen Kraft ,  Bernhard Löffler ,  Gerald Meinhardt

发明人： Jochen Kraft ,  Bernhard Löffler ,  Gerald Meinhardt

IPC分类号： H01L31/036

CPC分类号： H01L31/1812 ,  H01L31/1035 ,  Y02E10/50

摘要： A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced.

摘要翻译： 其中在形成在晶体半导体衬底的表面中的掺杂区域（DG）和沉积在所述掺杂区域之上的半导体层（HS）之间形成pn结的光电二极管。 在掺杂区域的边缘区域中提供了另外的掺杂（GD），通过该掺杂区域，附加的pn结掺杂更深地移动到衬底（SU）中。 由于以这种方式实现的pn结与相位边界处的缺陷的距离更大，所以光电二极管内的暗电流减小。

公开(公告)号：US07618871B2

公开(公告)日：2009-11-17

申请号：US10593141

申请日：2005-01-19

申请人： Gerald Meinhardt ,  Jochen Kraft

发明人： Gerald Meinhardt ,  Jochen Kraft

IPC分类号： H01L21/331

CPC分类号： H01L29/66242 ,  H01L29/66287

摘要： For the production of an improved bipolar transistor comprising a low-resistance base terminal, a dielectric layer is deposited over the semiconductor substrate and is highly doped via an implantation mask. In a subsequent controlled thermal step, the dopant is then indiffused into the semiconductor substrate from the dielectric layer serving as a dopant repository. This gives rise to a low-resistance region with which the extrinsic base can be defined carefully.

摘要翻译： 为了制造包括低电阻基极的改进的双极晶体管，介电层沉积在半导体衬底上，并通过注入掩模进行高度掺杂。 在随后的受控热步骤中，掺杂剂然后从用作掺杂剂储存库的介电层扩散到半导体衬底中。 这产生了可以仔细定义外在基极的低电阻区域。