公开(公告)号：US5605600A

公开(公告)日：1997-02-25

申请号：US402378

申请日：1995-03-13

申请人： Karl P. Muller ,  Klaus B. Roithner ,  Bernhard Poschenrieder ,  Toru Watanabe

发明人： Karl P. Muller ,  Klaus B. Roithner ,  Bernhard Poschenrieder ,  Toru Watanabe

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L21/3083 ,  H01L21/3065

摘要： In a method of etch profile shaping through wafer temperature control during an etch process wherein deposition of a passivation film is temperature dependent, a gap between a semiconductor wafer to be etched and a cathode is pressurized at a first pressure, and the pressure in the gap is changed to a second pressure at a predetermined time during the etch process, thereby altering heat transfer from the semiconductor wafer to the cathode. The temperature of the wafer is adjusted one or more times during an etching process to control profile shaping of deep trenches, contact holes and shapes for mask opening shaping during the etch process.

摘要翻译： 在蚀刻过程中通过晶片温度控制的蚀刻轮廓整形的方法中，其中钝化膜的沉积是温度依赖性的，要蚀刻的半导体晶片与阴极之间的间隙在第一压力下被加压，并且间隙中的压力 在蚀刻工艺期间在预定时间改变为第二压力，从而改变从半导体晶片到阴极的热传递。 在蚀刻过程期间，晶片的温度调整一次或多次，以控制在蚀刻工艺期间用于掩模开口成形的深沟槽，接触孔和形状的轮廓成形。