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公开(公告)号:US06428894B1
公开(公告)日:2002-08-06
申请号:US08868772
申请日:1997-06-04
申请人: Katherina E. Babich , Alessandro Cesare Callegari , Julien Fontaine , Alfred Grill , Christopher V. Jahnes , Vishnubhai Vitthalbhai Patel
发明人: Katherina E. Babich , Alessandro Cesare Callegari , Julien Fontaine , Alfred Grill , Christopher V. Jahnes , Vishnubhai Vitthalbhai Patel
IPC分类号: B32B900
CPC分类号: H01L21/02274 , C23C16/26 , C23C16/30 , G03F7/091 , H01L21/02115 , H01L21/02271 , H01L21/0276 , H01L21/31144 , H01L21/312 , H01L21/3127 , Y10T428/24942 , Y10T428/24975 , Y10T428/265 , Y10T428/30
摘要: Disclosed is vapor deposited BARC and method of preparing tunable and removable antireflective coatings based on amorphous carbon films. These films can be hydrogenated, fluorinated, nitrogenated carbon films. Such films have an index of refraction and an extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6, respectively, at UV and DUV wavelengths, in particular 365, 248 and 193 nm. Moreover, the films produced by the present invention can be deposited over device topography with high conformality, and they are etchable by oxygen and/or a fluoride ion etch process. Because of their unique properties, these films can be used to form a tunable and removable antireflective coating at UV and DUV wavelengths to produce near zero reflectance at the resist/BARC coating interface. This BARC greatly improves performance of semiconductor chips.
摘要翻译: 公开了蒸汽沉积的BARC和基于无定形碳膜制备可调谐和可去除的抗反射涂层的方法。 这些膜可以是氢化,氟化,氮化的碳膜。 这些膜的折射率和消光系数分别在UV和DUV波长,特别是365,248和193nm处可调,分别为约1.4至约2.1和约0.1至约0.6。 此外,由本发明生产的膜可以以高共形性沉积在器件形貌上,并且它们可通过氧和/或氟离子蚀刻工艺进行蚀刻。 由于其独特的性质,这些膜可用于在UV和DUV波长处形成可调谐和可去除的抗反射涂层,以在抗蚀剂/ BARC涂层界面处产生接近零的反射率。 该BARC大大提高了半导体芯片的性能。