公开(公告)号：US07602040B2

公开(公告)日：2009-10-13

申请号：US12102532

申请日：2008-04-14

申请人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

发明人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

IPC分类号： H01L29/00 ,  H01L23/58

CPC分类号： H01L21/76832 ,  H01L21/76801 ,  H01L21/76808 ,  H01L23/5258 ,  H01L23/53238 ,  H01L23/53295 ,  H01L27/10 ,  H01L2224/13

摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.

摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。

公开(公告)号：US07419901B2

公开(公告)日：2008-09-02

申请号：US11453897

申请日：2006-06-16

申请人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

发明人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

IPC分类号： H01L21/4763

CPC分类号： H01L21/76832 ,  H01L21/76801 ,  H01L21/76808 ,  H01L23/5258 ,  H01L23/53238 ,  H01L23/53295 ,  H01L27/10 ,  H01L2224/13

摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.

摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。

公开(公告)号：US20070026664A1

公开(公告)日：2007-02-01

申请号：US11453897

申请日：2006-06-16

申请人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

发明人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

IPC分类号： H01L21/4763

CPC分类号： H01L21/76832 ,  H01L21/76801 ,  H01L21/76808 ,  H01L23/5258 ,  H01L23/53238 ,  H01L23/53295 ,  H01L27/10 ,  H01L2224/13

摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.

摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。

公开(公告)号：US20100013046A1

公开(公告)日：2010-01-21

申请号：US12564043

申请日：2009-09-21

申请人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

发明人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

IPC分类号： H01L23/525 ,  H01L23/532

CPC分类号： H01L21/76832 ,  H01L21/76801 ,  H01L21/76808 ,  H01L23/5258 ,  H01L23/53238 ,  H01L23/53295 ,  H01L27/10 ,  H01L2224/13

摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.

摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。

公开(公告)号：US08686538B2

公开(公告)日：2014-04-01

申请号：US13597129

申请日：2012-08-28

申请人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

发明人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

IPC分类号： H01L29/00 ,  H01L27/10 ,  H01L23/58 ,  H01L23/62

CPC分类号： H01L21/76832 ,  H01L21/76801 ,  H01L21/76808 ,  H01L23/5258 ,  H01L23/53238 ,  H01L23/53295 ,  H01L27/10 ,  H01L2224/13

摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.

摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。

公开(公告)号：US08269309B2

公开(公告)日：2012-09-18

申请号：US13071546

申请日：2011-03-25

申请人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

发明人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

IPC分类号： H01L29/00 ,  H01L23/58

CPC分类号： H01L21/76832 ,  H01L21/76801 ,  H01L21/76808 ,  H01L23/5258 ,  H01L23/53238 ,  H01L23/53295 ,  H01L27/10 ,  H01L2224/13

摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.

摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。

公开(公告)号：US07968966B2

公开(公告)日：2011-06-28

申请号：US12564043

申请日：2009-09-21

申请人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

发明人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

IPC分类号： H01L29/00 ,  H01L23/58

CPC分类号： H01L21/76832 ,  H01L21/76801 ,  H01L21/76808 ,  H01L23/5258 ,  H01L23/53238 ,  H01L23/53295 ,  H01L27/10 ,  H01L2224/13

摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.

摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。

公开(公告)号：US20120319235A1

公开(公告)日：2012-12-20

申请号：US13597129

申请日：2012-08-28

申请人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

发明人： Katsuhiko Hotta ,  Kyoko Sasahara ,  Taichi Hayamizu ,  Yuichi Kawano

IPC分类号： H01L23/525

CPC分类号： H01L21/76832 ,  H01L21/76801 ,  H01L21/76808 ,  H01L23/5258 ,  H01L23/53238 ,  H01L23/53295 ,  H01L27/10 ,  H01L2224/13

摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.

摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。

公开(公告)号：US20120252205A1

公开(公告)日：2012-10-04

申请号：US13525195

申请日：2012-06-15

申请人： Katsuhiko Hotta ,  Kyoko Sasahara

发明人： Katsuhiko Hotta ,  Kyoko Sasahara

IPC分类号： H01L21/768

CPC分类号： H01L23/5226 ,  H01L21/76808 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/5258 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105

摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.

摘要翻译： 为了简化多层Cu互连的双镶嵌形成步骤，省略了在光致抗蚀剂膜下方的抗反射膜的形成步骤。 具体地说，用形成在其上的光致抗蚀剂膜作为掩模，干蚀刻层间绝缘膜，并且通过在形成在层间绝缘膜中的阻挡膜的表面处终止蚀刻来形成互连沟槽。 阻挡膜由具有低光反射率的SiCN膜制成，从而当曝光光致抗蚀剂膜时，其用作防反射膜。

公开(公告)号：US20120248613A1

公开(公告)日：2012-10-04

申请号：US13525251

申请日：2012-06-15

申请人： Katsuhiko Hotta ,  Kyoko Sasahara

发明人： Katsuhiko Hotta ,  Kyoko Sasahara

IPC分类号： H01L23/52

CPC分类号： H01L23/5226 ,  H01L21/76808 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/5258 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105

摘要： For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.