公开(公告)号：US20170133190A1

公开(公告)日：2017-05-11

申请号：US15348034

申请日：2016-11-10

Applicant: Katsuya UJIMOTO

Inventor： Katsuya UJIMOTO

IPC: H01J27/26

CPC classification number: H01J27/26 ,  H01J1/13 ,  H01J1/15 ,  H01J49/12

Abstract: An ion generation device is provided, which includes: a heater; a counter electrode arranged on one side of the heater; at least one electric member arranged between the heater and the counter electrode, the electric member being made of a pyroelectric element or a piezoelectric element; an electrode arranged between the heater and the electric member to be in contact with the electric member; and a temperature control circuit to control a temperature of the heater. An ion detection device is provided, which includes the above-described ion generation device, an ion filter to sort ions generated at the ion generation device, and a detector to detect the ions sorted in the ion filter.

公开(公告)号：US20230032228A1

公开(公告)日：2023-02-02

申请号：US17873159

申请日：2022-07-26

Applicant: Ryota SUTO ,  Katsuya UJIMOTO

Inventor： Ryota SUTO ,  Katsuya UJIMOTO

IPC: G01N27/414

Abstract: A semiconductor device includes a first gate electrode, a first insulating unit, a source electrode, a drain electrode, and a contact part. The first insulating unit is provided on a second gate electrode configured to control a reference voltage in a transport characteristic. The source electrode is connected to the first insulating unit. The drain electrode is connected to the first insulating unit. The contact part is provided between the source electrode and the drain electrode on the first insulating unit, and being able to be in contact with a sample. The sample is able to be in contact with the first gate electrode. A surface opposite to the first insulating unit, of the contact part is configured to be in contact with the samp1e.

公开(公告)号：US20190204273A1

公开(公告)日：2019-07-04

申请号：US15929053

申请日：2018-10-18

Applicant: Katsuya UJIMOTO ,  Shinichi KUBOTA ,  Kunihiro TAN

Inventor： Katsuya UJIMOTO ,  Shinichi KUBOTA ,  Kunihiro TAN

IPC: G01N27/62 ,  H01J49/10 ,  H01J49/00

CPC classification number: G01N27/624 ,  H01J49/0027 ,  H01J49/10

Abstract: An ion sensor, an ion sensor manufacturing method, and a field asymmetric ion mobility spectrometry (FAIMS) system. The ion sensor includes an ion filter including a first electrode and a second electrode facing each other, an ion sensing electrode with which an ion that has passed through the ion filter collides, and an insulator to electrically insulate the ion sensing electrode from the first electrode and the second electrode. The method includes forming a first slit on an active layer of an at least one SOI substrate, the at least one SOI substrate including a base layer, an insulating layer on the base layer, and the active layer on the insulating layer, dividing the active layer into two, forming a second slit through the base layer, the second slit overlapping with the first slit in a planar view, and forming a third slit through the insulating layer.