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    Field-effect transistor, single-electron transistor and sensor
    1.
    发明授权
    Field-effect transistor, single-electron transistor and sensor 有权
    场效应晶体管，单电子晶体管和传感器

    公开(公告)号：US08766326B2

    公开(公告)日：2014-07-01

    申请号：US13556316

    申请日：2012-07-24

    申请人： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Katou ,  Yutaka Yamada ,  Kazuhiro Nagaike ,  Yasuo Ifuku ,  Hiroshi Mitani

    发明人： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Katou ,  Yutaka Yamada ,  Kazuhiro Nagaike ,  Yasuo Ifuku ,  Hiroshi Mitani

    IPC分类号： H01L29/78

    CPC分类号： G01N27/4145 ,  B82Y10/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/068 ,  H01L29/42364 ,  H01L29/7613

    摘要： A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance.

    摘要翻译： 使用场效应晶体管或单电子晶体管作为用于检测诸如生物化合物的检测对象的传感器。 衬底具有第一侧和第二侧，第二侧与第一侧相对。 源电极设置在衬底的第一侧上，漏电极设置在衬底的第一侧上，沟道在源电极和漏电极之间形成电流通路。 相互作用感测门设置在衬底的第二侧上，相互作用感测门具有能够选择性地与检测目标相互作用的特定物质。 当与特定物质相互作用时，检测目标改变晶体管的特性，用于施加栅极电压的栅极调节晶体管的特性。

    Method of use of a field-effect transistor, single-electron transistor and sensor
    4.
    发明授权
    Method of use of a field-effect transistor, single-electron transistor and sensor 有权
    使用场效应晶体管，单电子晶体管和传感器的方法

    公开(公告)号：US08772099B2

    公开(公告)日：2014-07-08

    申请号：US13556314

    申请日：2012-07-24

    申请人： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Katou ,  Yutaka Yamada ,  Kazuhiro Nagaike ,  Yasuo Ifuku ,  Hiroshi Mitani

    发明人： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Katou ,  Yutaka Yamada ,  Kazuhiro Nagaike ,  Yasuo Ifuku ,  Hiroshi Mitani

    IPC分类号： H01L21/336

    CPC分类号： G01N27/4145 ,  B82Y10/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/068 ,  H01L29/42364 ,  H01L29/7613

    摘要： A method of detecting a detection target using a sensor requires a sensor having a transistor selected from the group of field-effect transistors or single electron transistors. The transistor includes a substrate, a source electrode disposed on the substrate and a drain electrode disposed on the substrate, and a channel forming a current path between the source electrode and the drawing electrode; an interaction-sensing gate comprising a specific substance; and a voltage gate. The method includes (a) providing the detection target on the interaction-sensing gate; (b) setting the gate voltage in the voltage gate at a predetermined level; (c) selectively interacting the specific substance with the detection target; (d) when the detection target interacts with the specific substance, changing a gate voltage in the voltage gate to adjust a characteristic of the transistor; and (e) measuring a change in the characteristic of the transistor to determine a presence of the detection target.

    摘要翻译： 使用传感器检测检测目标的方法需要具有选自场效应晶体管组或单电子晶体管的晶体管的传感器。 晶体管包括衬底，设置在衬底上的源电极和设置在衬底上的漏极，以及形成源极和引出电极之间的电流通路的沟道; 包括特定物质的相互作用感测门; 和电压门。 该方法包括（a）在相互作用感测门上提供检测目标; （b）将电压门中的栅极电压设定在预定电平; （c）选择性地将特定物质与检测目标相互作用; （d）当检测目标与特定物质相互作用时，改变电压门中的栅极电压以调整晶体管的特性; 以及（e）测量所述晶体管的特性的变化以确定所述检测目标的存在。

    FIELD-EFFECT TRANSISTOR, SINGLE-ELECTRON TRANSISTOR AND SENSOR
    5.
    发明申请
    FIELD-EFFECT TRANSISTOR, SINGLE-ELECTRON TRANSISTOR AND SENSOR 有权
    场效应晶体管，单电子晶体管和传感器

    公开(公告)号：US20120286243A1

    公开(公告)日：2012-11-15

    申请号：US13556316

    申请日：2012-07-24

    申请人： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Katou ,  Yutaka Yamada ,  Kazuhiro Nagaike ,  Yasuo Ifuku ,  Hiroshi Mitani

    发明人： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Katou ,  Yutaka Yamada ,  Kazuhiro Nagaike ,  Yasuo Ifuku ,  Hiroshi Mitani

    IPC分类号： G01N27/414 ,  H01L29/772 ,  B82Y15/00

    CPC分类号： G01N27/4145 ,  B82Y10/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/068 ,  H01L29/42364 ,  H01L29/7613

    摘要： A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance.

    摘要翻译： 使用场效应晶体管或单电子晶体管作为用于检测诸如生物化合物的检测对象的传感器。 衬底具有第一侧和第二侧，第二侧与第一侧相对。 源电极设置在衬底的第一侧上，漏电极设置在衬底的第一侧上，沟道在源电极和漏电极之间形成电流通路。 相互作用感测门设置在衬底的第二侧上，相互作用感测门具有能够选择性地与检测目标相互作用的特定物质。 当与特定物质相互作用时，检测目标改变晶体管的特性，用于施加栅极电压的栅极调节晶体管的特性。

    Sensor Unit and Reaction Field Cell Unit and Analyzer
    6.
    发明申请
    Sensor Unit and Reaction Field Cell Unit and Analyzer 审中-公开
    传感器单元和反应场单元和分析仪

    公开(公告)号：US20080063566A1

    公开(公告)日：2008-03-13

    申请号：US11661853

    申请日：2005-09-01

    申请人： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Kato ,  Yasuo Ifuku ,  Hiroshi Mitani ,  Haruyo Saitou

    发明人： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Kato ,  Yasuo Ifuku ,  Hiroshi Mitani ,  Haruyo Saitou

    IPC分类号： G01N27/28 ,  B01J19/00

    CPC分类号： G01N33/5438 ,  G01N27/4145 ,  G01N27/4146

    摘要： To improve convenience of a sensor unit using a transistor in analysis, a sensing gate for detection 117 of a sensor unit for detecting a detection target comprises a transistor part 103 having a substrate 108, a source electrode 111 and a drain electrode 112 provided on the substrate 108, a channel 113 forming a current path between the source electrode 111 and the drain electrode 112, and the sensing gate for detection 117 is provided with a gate body 115 fixed to the substrate 108 and a sensing part 116 capable of electrically conducting to the gate body 115 and on which a specific substance 123 capable of selectively interacting with the detection target is immobilized.

    摘要翻译： 为了提高使用分析用晶体管的传感器单元的便利性，用于检测检测对象的传感器单元的检测用感测门117包括具有基板108，源电极111和漏电极112的晶体管部103， 衬底108，形成源电极111和漏电极112之间的电流路径的通道113以及用于检测的检测门117设置有固定到衬底108的栅极主体115和能够导电到 能够与检测对象物选择性地相互作用的特定物质123固定在其上。