Transistor array, manufacturing method thereof and image processor
    1.
    发明授权
    Transistor array, manufacturing method thereof and image processor 有权
    晶体管阵列及其制造方法及图像处理器

    公开(公告)号:US08227906B2

    公开(公告)日:2012-07-24

    申请号:US13052724

    申请日:2011-03-21

    IPC分类号: H01L23/02

    摘要: An image processor by way of a transistor array in which a plurality of transistors are formed on a substrate comprising a plurality of polysilicon thin-film transistors using a first semiconductor layer composed of polysilicon formed on the substrate and functional devices having a plurality of amorphous silicon thin-film transistors using a second semiconductor layer composed of amorphous silicon which are formed in an upper layer more superior than the first semiconductor layer. The polysilicon thin-film transistors and functional devices include a plurality of electrode layers composed of a conductor layer, for instance, the functional devices at least of any one of the electrode layers are formed in the same layer as any one the electrode layers of the polysilicon thin-film transistors.

    摘要翻译: 一种通过晶体管阵列的图像处理器,其中在包括多个多晶硅薄膜晶体管的基板上形成多个晶体管,所述多个多晶硅薄膜晶体管使用由在基板上形成的多晶硅构成的第一半导体层,以及具有多个非晶硅的功能元件 薄膜晶体管使用由非晶硅组成的第二半导体层,所述第二半导体层形成在比第一半导体层更优越的上层中。 多晶硅薄膜晶体管和功能元件包括由导体层构成的多个电极层,例如,功能元件,至少任一个电极层形成在与电极层的电极层中的任一个相同的层中 多晶硅薄膜晶体管。

    Transistor array, manufacturing method thereof and image processor
    2.
    发明授权
    Transistor array, manufacturing method thereof and image processor 有权
    晶体管阵列及其制造方法及图像处理器

    公开(公告)号:US07915723B2

    公开(公告)日:2011-03-29

    申请号:US11046380

    申请日:2005-01-28

    IPC分类号: H01L23/02

    摘要: An image processor by way of a transistor array in which a plurality of transistors are formed on a substrate comprising a plurality of polysilicon thin-film transistors using a first semiconductor layer composed of polysilicon formed on the substrate and functional devices having a plurality of amorphous silicon thin-film transistors using a second semiconductor layer composed of amorphous silicon which are formed in an upper layer more superior than the first semiconductor layer. The polysilicon thin-film transistors and functional devices include a plurality of electrode layers composed of a conductor layer, for instance, the functional devices at least of any one of the electrode layers are formed in the same layer as any one the electrode layers of the polysilicon thin-film transistors.

    摘要翻译: 一种通过晶体管阵列的图像处理器,其中在包括多个多晶硅薄膜晶体管的基板上形成多个晶体管,所述多个多晶硅薄膜晶体管使用由在基板上形成的多晶硅构成的第一半导体层,以及具有多个非晶硅的功能元件 薄膜晶体管使用由非晶硅组成的第二半导体层,所述第二半导体层形成在比第一半导体层更优越的上层中。 多晶硅薄膜晶体管和功能元件包括由导体层构成的多个电极层,例如,功能元件,至少任一个电极层形成在与电极层的电极层中的任一个相同的层中 多晶硅薄膜晶体管。

    TRANSISTOR ARRAY, MANUFACTURING METHOD THEREOF AND IMAGE PROCESSOR
    3.
    发明申请
    TRANSISTOR ARRAY, MANUFACTURING METHOD THEREOF AND IMAGE PROCESSOR 有权
    晶体管阵列及其制造方法及图像处理器

    公开(公告)号:US20110169843A1

    公开(公告)日:2011-07-14

    申请号:US13052724

    申请日:2011-03-21

    IPC分类号: G06F13/14

    摘要: An image processor by way of a transistor array in which a plurality of transistors are formed on a substrate comprising a plurality of polysilicon thin-film transistors using a first semiconductor layer composed of polysilicon formed on the substrate and functional devices having a plurality of amorphous silicon thin-film transistors using a second semiconductor layer composed of amorphous silicon which are formed in an upper layer more superior than the first semiconductor layer. The polysilicon thin-film transistors and functional devices include a plurality of electrode layers composed of a conductor layer, for instance, the functional devices at least of any one of the electrode layers are formed in the same layer as any one the electrode layers of the polysilicon thin-film transistors.

    摘要翻译: 一种通过晶体管阵列的图像处理器,其中在包括多个多晶硅薄膜晶体管的基板上形成多个晶体管,所述多个多晶硅薄膜晶体管使用由在基板上形成的多晶硅构成的第一半导体层,以及具有多个非晶硅的功能元件 薄膜晶体管使用由非晶硅组成的第二半导体层,所述第二半导体层形成在比第一半导体层更优越的上层中。 多晶硅薄膜晶体管和功能元件包括由导体层构成的多个电极层,例如,功能元件,至少任一个电极层形成在与电极层的电极层中的任一个相同的层中 多晶硅薄膜晶体管。

    Transistor arrray, manufacturing method thereof and image processor
    4.
    发明申请
    Transistor arrray, manufacturing method thereof and image processor 有权
    晶体管阵列,其制造方法和图像处理器

    公开(公告)号:US20050176194A1

    公开(公告)日:2005-08-11

    申请号:US11046380

    申请日:2005-01-28

    摘要: An image processor by way of a transistor array in which a plurality of transistors are formed on a substrate comprising a plurality of polysilicon thin-film transistors using a first semiconductor layer composed of polysilicon formed on the substrate and functional devices having a plurality of amorphous silicon thin-film transistors using a second semiconductor layer composed of amorphous silicon which are formed in an upper layer more superior than the first semiconductor layer. The polysilicon thin-film transistors and functional devices include a plurality of electrode layers composed of a conductor layer, for instance, the functional devices at least of any one of the electrode layers are formed in the same layer as any one the electrode layers of the polysilicon thin-film transistors.

    摘要翻译: 一种通过晶体管阵列的图像处理器,其中在包括多个多晶硅薄膜晶体管的基板上形成多个晶体管,所述多个多晶硅薄膜晶体管使用由在基板上形成的多晶硅构成的第一半导体层,以及具有多个非晶硅的功能元件 薄膜晶体管使用由非晶硅组成的第二半导体层,所述第二半导体层形成在比第一半导体层更优越的上层中。 多晶硅薄膜晶体管和功能元件包括由导体层构成的多个电极层,例如,功能元件,至少任一个电极层形成在与电极层的电极层中的任一个相同的层中 多晶硅薄膜晶体管。

    Image inputting apparatus
    5.
    发明申请
    Image inputting apparatus 有权
    图像输入装置

    公开(公告)号:US20080265186A1

    公开(公告)日:2008-10-30

    申请号:US12148790

    申请日:2008-04-22

    IPC分类号: H01L31/12

    摘要: Disclosed is an image inputting apparatus including: a base; a sensor main body coupled with the base so as to be able to move in a vertical direction on the base; a switch provided on either one of an upper surface side of the base or a lower surface side of the sensor main body; and a convex part provided on another one of the upper surface side of the base or the lower surface side of the sensor main body at a position facing to the switch.

    摘要翻译: 公开了一种图像输入装置,包括:基座; 传感器主体,其与所述基座结合,以便能够在所述基座上沿垂直方向移动; 设置在所述基座的上表面侧或所述传感器主体的下表面侧的任一个上的开关; 以及设置在面向开关的位置的传感器主体的基座的上表面侧或下表面侧的另一个上的凸部。

    Image inputting apparatus
    6.
    发明授权
    Image inputting apparatus 有权
    图像输入装置

    公开(公告)号:US07671326B2

    公开(公告)日:2010-03-02

    申请号:US12148790

    申请日:2008-04-22

    IPC分类号: H01J5/02

    摘要: Disclosed is an image inputting apparatus including: a base; a sensor main body coupled with the base so as to be able to move in a vertical direction on the base; a switch provided on either one of an upper surface side of the base or a lower surface side of the sensor main body; and a convex part provided on another one of the upper surface side of the base or the lower surface side of the sensor main body at a position facing to the switch.

    摘要翻译: 公开了一种图像输入装置,包括:基座; 传感器主体,其与所述基座结合,以便能够在所述基座上沿垂直方向移动; 设置在所述基座的上表面侧或所述传感器主体的下表面侧的任一个上的开关; 以及设置在面向开关的位置的传感器主体的基座的上表面侧或下表面侧的另一个上的凸部。

    Liquid crystal display panel and touch panel
    9.
    发明授权
    Liquid crystal display panel and touch panel 有权
    液晶显示面板和触摸屏

    公开(公告)号:US08624854B2

    公开(公告)日:2014-01-07

    申请号:US12827243

    申请日:2010-06-30

    申请人: Kazuhiro Sasaki

    发明人: Kazuhiro Sasaki

    IPC分类号: G06F3/041 G09G3/36

    摘要: A liquid crystal display panel includes a pixel electrode to apply a voltage to a liquid crystal layer disposed between the pixel electrode and an opposed electrode, a thin film transistor connected to the pixel electrode, a scanning line to supply a gate signal to the thin film transistor, a first coordinate detection line disposed parallel to the scanning line, a first coordinate detection electrode formed closer to the liquid crystal layer than the scanning line and the first coordinate detection line, and a first insulating film formed as a layer between the first coordinate detection line and the first coordinate detection electrode. The first insulating film is provided with a contact hole to electrically connect the first coordinate detection line and the first coordinate detection electrode.

    摘要翻译: 液晶显示面板包括像素电极,用于对设置在像素电极和相对电极之间的液晶层施加电压,连接到像素电极的薄膜晶体管,向薄膜提供栅极信号的扫描线 晶体管,与扫描线平行设置的第一坐标检测线,形成为比扫描线和第一坐标检测线更靠近液晶层的第一坐标检测电极,以及第一绝缘膜,其形成为第一坐标 检测线和第一坐标检测电极。 第一绝缘膜设置有用于电连接第一坐标检测线和第一坐标检测电极的接触孔。

    Liquid crystal display device and liquid crystal display apparatus
    10.
    发明授权
    Liquid crystal display device and liquid crystal display apparatus 失效
    液晶显示装置和液晶显示装置

    公开(公告)号:US08400411B2

    公开(公告)日:2013-03-19

    申请号:US12568819

    申请日:2009-09-29

    IPC分类号: G06F3/041

    CPC分类号: G06F3/0412 G06F3/045

    摘要: A liquid crystal display device includes first and second substrates arranged to face each other with a predetermined gap, and a liquid crystal layer sealed between the first and second substrates. The first substrate includes pixel electrodes and thin-film transistors connected with the pixel electrodes. The transistors are turned on based on a scanning signal from scanning lines to electrically connect the pixel electrodes to signal lines. The second substrate has an opposed electrode, which forms pixels in areas facing the pixel electrodes. The device also has a touch input contact point provided on either the pixel electrodes or the opposed electrode to correspond to a previously selected pixel. The contact point protrudes at a height smaller than the gap between the first and second substrates and is brought into conduction by flexural deformation caused by a pressing force of a touch onto the first or second substrates.

    摘要翻译: 液晶显示装置包括以预定间隙彼此相对布置的第一和第二基板,以及密封在第一和第二基板之间的液晶层。 第一基板包括与像素电极连接的像素电极和薄膜晶体管。 晶体管基于来自扫描线的扫描信号导通,以将像素电极电连接到信号线。 第二基板具有在面向像素电极的区域中形成像素的相对电极。 该装置还具有设置在像素电极或相对电极上的触摸输入触点,以对应于先前选择的像素。 接触点以比第一和第二基板之间的间隙小的高度突出,并且通过由触摸的按压力引起到第一或第二基板上的弯曲变形而被引导。