公开(公告)号：US20120054697A1

公开(公告)日：2012-03-01

申请号：US13222016

申请日：2011-08-31

申请人： Kazuhiro TAKAHATA ,  Tetsuaki MATSUNAWA ,  Masahiro MIYAIRI ,  Shimon MAEDA ,  Shigeki NOJIMA

发明人： Kazuhiro TAKAHATA ,  Tetsuaki MATSUNAWA ,  Masahiro MIYAIRI ,  Shimon MAEDA ,  Shigeki NOJIMA

IPC分类号： G06F17/50

CPC分类号： G03F7/70125

摘要： According to one embodiment, a light source shape calculation method includes calculating a first light source shape as an exposure illumination light source shape, so that the first light source shape has a light source shape region symmetrical to an X-axis direction and a Y-axis direction, and a process margin when forming an on-substrate pattern corresponding to at least two pattern layouts defined by design rules is optimized. A point light source is calculated such that the process margin of formation of the on-substrate pattern corresponding to a pattern layout to be formed on a semiconductor device is optimized, and is applied to the first light source shape.

摘要翻译： 根据一个实施例，光源形状计算方法包括计算作为曝光照明光源形状的第一光源形状，使得第一光源形状具有与X轴方向对称的光源形状区域和Y轴方向， 并且当形成与由设计规则定义的至少两个图案布局相对应的基板上图案时的处理余量被优化。 计算点光源，使得对应于要形成在半导体器件上的图案布局的衬底上图案的形成工艺余量优化，并应用于第一光源形状。

公开(公告)号：US20120244717A1

公开(公告)日：2012-09-27

申请号：US13233583

申请日：2011-09-15

申请人： Yingkang ZHANG ,  Katsuyoshi KODERA ,  Tetsuaki MATSUNAWA ,  Masanori TAKAHASHI

发明人： Yingkang ZHANG ,  Katsuyoshi KODERA ,  Tetsuaki MATSUNAWA ,  Masanori TAKAHASHI

IPC分类号： H01L21/268 ,  B29C35/08

CPC分类号： G03F7/427 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： According to one embodiment, a resin removal method is provided. In the resin removal method, near-field light is generated in a local area of a pattern concave-convex portion on a pattern master used for imprinting by irradiating the pattern master with ultraviolet light in an ashing gas atmosphere which removes resin attached to the pattern master. Then, the resin is removed from the pattern master by using the ashing gas and the near-field light.

摘要翻译： 根据一个实施例，提供树脂去除方法。 在树脂去除方法中，通过在附着于图案的灰色气体气氛中用紫外线照射图案母版的图案母版上的图案凹凸部分的局部区域中产生近场光， 主。 然后，通过使用灰化气体和近场光从图案母版去除树脂。

公开(公告)号：US20100233598A1

公开(公告)日：2010-09-16

申请号：US12647203

申请日：2009-12-24

申请人： Tetsuaki MATSUNAWA ,  Soichi INOUE

发明人： Tetsuaki MATSUNAWA ,  Soichi INOUE

IPC分类号： G03F7/20 ,  G06K9/00 ,  G06F17/50

CPC分类号： G06K9/036 ,  G03F1/36

摘要： A mask-pattern correcting apparatus according to an embodiment of the present invention includes: a pattern-shape variable mask, transmittance or reflectance of which can be changed; a light-receiving element unit that detects an optical image of a mask pattern formed by light irradiated on the pattern-shape variable mask; and a control unit that controls the pattern-shape variable mask to form a mask pattern according to a shape of a design layout and determines a correction amount of the mask pattern such that a difference between an optical image obtained by the light-receiving element unit and the design layout is within a predetermined range.

摘要翻译： 根据本发明的实施例的掩模图案校正装置包括：可以改变透射率或反射率的图案形状可变掩模; 光接收元件单元，其检测由照射在图案形状可变掩模上的光形成的掩模图案的光学图像; 以及控制单元，其根据设计布局的形状来控制图案形状可变掩模以形成掩模图案，并且确定掩模图案的校正量，使得由光接收元件单元获得的光学图像之间的差异 并且设计布局在预定范围内。

公开(公告)号：US20120324407A1

公开(公告)日：2012-12-20

申请号：US13420690

申请日：2012-03-15

申请人： Tetsuaki MATSUNAWA ,  Shoji Mimotogi ,  Masafumi Asano

发明人： Tetsuaki MATSUNAWA ,  Shoji Mimotogi ,  Masafumi Asano

IPC分类号： G06F17/50

CPC分类号： G03F7/705

摘要： According to a simulation model creating method of an embodiment, a resist pattern is formed by transferring a mask pattern on a first substrate with an exposing amount and a focus value being changed, and a line width of the resist pattern is measured. Next, measurement results which are not within an allowable change range due to an irregularity of the exposing amount, an irregularity of the focus value or pattern feature amount are removed. In addition, measurement results which are not with in an allowable change range due to an irregularity of the line width of the mask pattern are removed. Next, a simulation model is created by using measurement results which are not removed.

摘要翻译： 根据实施例的模拟模型创建方法，通过以暴露量和焦点值改变在第一基板上转印掩模图案并且测量抗蚀剂图案的线宽来形成抗蚀剂图案。 接下来，除去由于曝光量的不规则性，焦点值或图案特征量的不规则性而在允许的变化范围内的测量结果。 此外，除去由于掩模图案的线宽的不规则性而在允许的变化范围内不具有的测量结果。 接下来，通过使用未被去除的测量结果来创建模拟模型。