Abstract:
A semiconductor device operates in an active mode or a standby mode, and includes a substrate-potential power source line supplying a substrate potential which is higher in a standby mode than in an active mode, and a source-potential power source line supplying a source potential which is lower in a standby mode than in an active mode. During a mode shift from the standby mode to the active mode, a potential equalizing transistor is turned ON to pass a current flowing from the substrate-potential power source line to the source-potential power source line, to reduce the time length needed for shifting from the standby mode to the active mode.
Abstract:
A semiconductor memory device is provided that is capable of detecting a short circuit defect to be detected in a memory array without causing an error due to off-current of a sense amplifier circuit. Sense amplifier circuits amplify a potential between a pair of bit lines, which occurs based on potential of memory cells selected by driving word lines and bit lines. Selection transistors are provided between the bit lines and the sense amplifier circuits. A word-SE interval control circuit included in an X timing generating circuit turns off the selection transistors and disconnects the bit lines from the sense amplifier circuits based on a signal representing a test state for expanded time when a test to expand an interval between word line driving and activation of the sense amplifier circuits and detect defect sites of the bit lines is performed.
Abstract:
A semiconductor device includes a plurality of first output terminals 1-13 and a plurality of first output circuits 203,204 provided corresponding to each of the plurality of first output terminals and coupled to a corresponding first output terminal. The semiconductor device further includes a second output circuit 201 coupled to a second output terminal DQS. The second output circuit automatically adjusts a slew rate based on the state transitions of the plurality of first output circuits. The second output circuit adjusts the slew rate from a first state to a second state based on a transition from first data outputted from the first output circuit to second data following said first data. The second output circuit outputs data in synchronization with the second data with a slew rate in said second state.
Abstract:
A semiconductor device includes a plurality of first output terminals 1-13 and a plurality of first output circuits 203,204 provided corresponding to each of the plurality of first output terminals and coupled to a corresponding first output terminal. The semiconductor device further includes a second output circuit 201 coupled to a second output terminal DQS. The second output circuit automatically adjusts a slew rate based on the state transitions of the plurality of first output circuits. The second output circuit adjusts the slew rate from a first state to a second state based on a transition from first data outputted from the first output circuit to second data following said first data. The second output circuit outputs data in synchronization with the second data with a slew rate in said second state.
Abstract:
A semiconductor memory device is provided that is capable of detecting a short circuit defect to be detected in a memory array without causing an error due to off-current of a sense amplifier circuit. Sense amplifier circuits amplify a potential between a pair of bit lines, which occurs based on potential of memory cells selected by driving word lines and bit lines. Selection transistors are provided between the bit lines and the sense amplifier circuits. A word-SE interval control circuit included in an X timing generating circuit turns off the selection transistors and disconnects the bit lines from the sense amplifier circuits based on a signal representing a test state for expanded time when a test to expand an interval between word line driving and activation of the sense amplifier circuits and detect defect sites of the bit lines is performed.
Abstract:
Auto-refresh of a semiconductor device may be controlled by setting the number of auto-refresh to be performed in a period of time, based on temperature, when an auto-refresh command is detected.
Abstract:
In an air compressor which can cope with an item to be replaced which is not a manufacturer's recommended item so as to enhance the safety, there is provided, as an example, an air compressor comprising a compressor body for compressing air, an item to be replaced (in detail, for example, a suction belt, a suction filter, a separator element and an oil filter) used during the operation of the compressor body, comprising a control device for computing a service time of the item to be replaced, from an operation time of the compressor body, discriminating whether the item to be replaced is a manufacturer's recommended item or not, determining whether or not the service time of the item to be replaced, which is discriminated as a manufacturer's recommended item, exceeds a preset first reference time, but determining whether the service time of the item to be replaced, which is discriminated as the one which is not the manufacturer's recommended item, exceeds a second reference time which has been preset so as to be shorter than the first reference time, and issuing an alarm if the reference time is exceeded.
Abstract:
In an air compressor which can cope with an item to be replaced which is not a manufacturer's recommended item so as to enhance the safety, there is provided, as an example, an air compressor comprising a compressor body for compressing air, an item to be replaced (in detail, for example, a suction belt, a suction filter, a separator element and an oil filter) used during the operation of the compressor body, comprising a control device for computing a service time of the item to be replaced, from an operation time of the compressor body, discriminating whether the item to be replaced is a manufacturer's recommended item or not, determining whether or not the service time of the item to be replaced, which is discriminated as a manufacturer's recommended item, exceeds a preset first reference time, but determining whether the service time of the item to be replaced, which is discriminated as the one which is not the manufacturer's recommended item, exceeds a second reference time which has been preset so as to be shorter than the first reference time, and issuing an alarm if the reference time is exceeded.
Abstract:
A semiconductor memory device includes a shared transistor controlling coupling between a bit line pair in a memory cell array and a bit line pair in a sense amplifier. After a word line is activated and the sense amplifier amplifies the potential difference between the bit lines of the bit line pair in the sense amplifier, the shared transistor is tuned OFF and precharge/equalizing circuit is activated to precharge the bit lines in the sense amplifier to a potential which is half the internal power source potential.
Abstract:
A control method for an air compressor including a compressor body for compressing air and an item to be replaced used during the operation of the compressor body. The method includes computing a service time of the item to be replaced, being based upon an operating time of the compressor body, discriminating whether the item to be replaced is a manufacturer's recommended item or not, determining whether or not the service time of the item to be replaced discriminated as the manufacturer's recommend item is not longer than a first reference time, but determining whether or not the service time of the item to be replaced discriminated as one which is not the manufacturer's recommended item is not longer than a preset second reference time which is shorter than the first reference time, and issuing an alarm when determining that the reference time is exceeded.