-
公开(公告)号：US08324377B2
公开(公告)日：2012-12-04
申请号：US11262910
申请日：2005-11-01
IPC分类号： C08B11/20 , B01D37/00 , B01D33/073 , B01D33/45 , B01D33/50
CPC分类号： C08B11/22
摘要： A water-soluble cellulose ether is separated from its suspension by passing a suspension of water-soluble cellulose ether particles in water through a filter of perforated metallic or ceramic filter medium under pressure, removing the filter cake of water-soluble cellulose ether from the filter medium, and cleaning the filter medium with steam, compressed air or water under pressure. The invention enables to separate a water-soluble cellulose ether, especially having a high dissolution temperature, avoids the filter from being clogged, and extends the operative time of the filter.
摘要翻译： 通过使水溶性纤维素醚颗粒在水中的悬浮液通过穿孔的金属或陶瓷过滤介质的过滤器在压力下将其从其悬浮液中分离出来，从过滤器中除去水溶性纤维素醚的滤饼 并在压力下用蒸汽，压缩空气或水清洗过滤介质。 本发明能够分离特别是具有高溶解温度的水溶性纤维素醚，避免过滤器堵塞，并延长过滤器的操作时间。
-
公开(公告)号：US20060122384A1
公开(公告)日：2006-06-08
申请号：US11262910
申请日：2005-11-01
IPC分类号： C08B11/20
CPC分类号： C08B11/22
摘要： A water-soluble cellulose ether is separated from its suspension by passing a suspension of water-soluble cellulose ether particles in water through a filter of perforated metallic or ceramic filter medium under pressure, removing the filter cake of water-soluble cellulose ether from the filter medium, and cleaning the filter medium with steam, compressed air or water under pressure. The invention enables to separate a water-soluble cellulose ether, especially having a high dissolution temperature, avoids the filter from being clogged, and extends the operative time of the filter.
摘要翻译： 通过使水溶性纤维素醚颗粒在水中的悬浮液通过穿孔的金属或陶瓷过滤介质的过滤器在压力下将其从其悬浮液中分离出来，从过滤器中除去水溶性纤维素醚的滤饼 并在压力下用蒸汽，压缩空气或水清洗过滤介质。 本发明能够分离特别是具有高溶解温度的水溶性纤维素醚，避免过滤器堵塞，并延长过滤器的操作时间。
-
3.发明授权公开(公告)号：US08793853B2
公开(公告)日：2014-08-05
申请号：US13502015
申请日：2010-07-27
IPC分类号： B25B1/00
CPC分类号： C01B33/035 , Y10T29/53796 , Y10T29/53961
摘要： One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
摘要翻译： 芯线保持架20的一端形成为截头圆锥形，具有倾斜面。 在端部设有开口部22，形成中空部21，插入中空部21并保持在其中的硅芯线5。 在硅芯线5的表面上，通过西门子方法气相沉积多晶硅6以制造多晶硅棒。 在开口部22附近的截锥体的倾斜面上，作为绝热层，从开口部的朝向中空部21的外周面形成环状狭缝23a〜23c。环状狭缝 用作绝热部分，并且抑制热量逸出以加热芯线保持器20的一端侧。
-
公开(公告)号：US08328935B2
公开(公告)日：2012-12-11
申请号：US12418165
申请日：2009-04-03
CPC分类号： C01B33/03 , C01B33/035
摘要： The present invention is a method of manufacturing polycrystalline silicon rods, wherein silicon is deposited onto a silicon core wire by a chemical vapor deposition (CVD) method such that a silicon member, which is cut out from a single-crystalline silicon ingot at an off-angle range of 5 to 40 degrees relative to a crystal habit line of the ingot, is used as the silicon core wire. The single-crystalline silicon ingot is preferably grown by a Czochralski (CZ) method or floating zone (FZ) method, such that the ingot preferably has an interstitial oxygen concentration of 7 ppma to 20 ppma. Silicon rods produced by this method are less likely to suffer a breakage caused by cleavage during the growth process of polycrystalline silicon during CVD, and exhibit improved FZ method success rates. The polycrystalline silicon rods produced by this method also have low impurity contamination and high single-crystallization efficiency.
摘要翻译： 本发明是一种制造多晶硅棒的方法，其中通过化学气相沉积（CVD）方法将硅沉积到硅芯线上，使得从断开的单晶硅锭切出的硅构件 使用相对于锭的晶体习性线5〜40度的角度范围，作为硅芯线。 单晶硅锭优选通过切克劳斯基（CZ）法或浮动区（FZ）法生长，使得锭优选具有7ppma至20ppma的间隙氧浓度。 通过该方法制造的硅棒在CVD期间不太可能在多晶硅生长过程中由于断裂引起的断裂，并且显示出改进的FZ方法成功率。 通过该方法制造的多晶硅棒也具有低杂质污染和高单结晶效率。
-
公开(公告)号：US20130089489A1
公开(公告)日：2013-04-11
申请号：US13704767
申请日：2011-03-07
IPC分类号： B08B3/10 , F26B5/12 , C01B33/035
CPC分类号： F26B5/042 , B08B3/04 , B08B3/10 , C01B33/035 , C23C16/4407 , F26B5/12 , F28G13/00
摘要： A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.
-
6.发明申请公开(公告)号：US20120222619A1
公开(公告)日：2012-09-06
申请号：US13508826
申请日：2010-10-22
IPC分类号： C23C16/50
CPC分类号： C23C16/458 , C01B32/225 , C01B33/035 , C23C16/24
摘要： The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.
摘要翻译： 上电极31具有从上表面33延伸到下表面34的孔35，将螺栓36从上电极31的上表面33插入孔35中，并通过螺钉固定在下电极32中 。 孔35的内部和螺栓36的直体部之间的间隙51允许上电极31在放置表面（在下电极32的下表面34的上表面）的所有方向上滑动 作为与下部电极32的上表面的接触面的图2中的上部电极31），由此提供防止U棒的发生龟裂或断裂的效果，U棒能够在各个方向上膨胀和收缩 气相生长过程。
-
公开(公告)号：US20090269493A1
公开(公告)日：2009-10-29
申请号：US12418165
申请日：2009-04-03
IPC分类号： C23C16/24
CPC分类号： C01B33/03 , C01B33/035
摘要： The present invention utilizes a silicon member (single-crystalline silicon rod), which is cut out from a single-crystalline silicon ingot which is grown by a CZ method or FZ method, as the core wire when manufacturing a silicon rod. Specifically, a planar silicon is cut out from a body portion which is obtained by cutting off a shoulder portion and a tail portion from a single-crystalline silicon ingot and is further cut into thin rectangles to obtain a silicon bar. In the case that the crystal growth axis orientation is , there are four crystal habit lines, and the silicon bar is cut out such that the surface forms an off-angle θ in a predetermined range with the crystal habit line. The provided polycrystalline silicon rod has a low impurity contamination and high single-crystallization efficiency.
摘要翻译： 本发明使用在制造硅棒时，通过CZ法或FZ法生长的单晶硅锭切出的硅构件（单晶硅棒）作为芯线。 具体地说，从通过从单晶硅锭切断肩部和尾部获得的主体部分切出平面硅，并进一步切割成细长矩形以获得硅棒。 在晶体生长轴取向为<100>的情况下，存在四条晶体习性线，切割出硅棒，使得该表面与晶体习性线形成预定范围的偏角θ。 所提供的多晶硅棒具有低杂质污染和高单结晶效率。
-
8.发明授权Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rod 有权具有可滑动接触表面的碳电极和用于制造多晶硅棒的设备公开(公告)号：US09562289B2
公开(公告)日：2017-02-07
申请号：US13508826
申请日：2010-10-22
IPC分类号： C30B28/12 , C23C16/458 , C01B33/035 , C23C16/24 , C01B31/04
CPC分类号： C23C16/458 , C01B32/225 , C01B33/035 , C23C16/24
摘要： The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.
摘要翻译： 上电极31具有从上表面33延伸到下表面34的孔35，将螺栓36从上电极31的上表面33插入孔35中，并通过螺钉固定在下电极32中 。 孔35的内部和螺栓36的直体部之间的间隙51允许上电极31在放置表面（在下电极32的下表面34的上表面）的所有方向上滑动 作为与下部电极32的上表面的接触面的图2中的上部电极31），由此提供防止U棒的发生龟裂或断裂的效果，U棒能够在各个方向上膨胀和收缩 气相生长过程。
-
9.发明授权Method for cleaning bell jar, method for producing polycrystalline silicon, and apparatus for drying bell jar 有权钟罩的清洗方法，多晶硅的制造方法以及钟罩的干燥装置公开(公告)号：US09126242B2
公开(公告)日：2015-09-08
申请号：US13704767
申请日：2011-03-07
CPC分类号： F26B5/042 , B08B3/04 , B08B3/10 , C01B33/035 , C23C16/4407 , F26B5/12 , F28G13/00
摘要： A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.
摘要翻译： 钟形瓶包括金属钟形瓶（1）和金属底板（2），其上放置钟形罩（1），并且包装（3）密封容器的内部。 连接到基板（2）上的压力计（4），气体引入管线（5）和气体排出管线（6），以便监测钟罩（1）的内部压力和引入 并排出气体。 真空泵（7）设置在气体排出管路（6）的路径中，真空泵（7）将钟罩的内部压力降低到低于水的蒸汽压力。 真空泵（7）将钟罩的内部压力降低到低于水的蒸汽压力，从而有效地去除水分，并在短时间内完成钟罩的干燥。
-
10.发明申请公开(公告)号：US20120201976A1
公开(公告)日：2012-08-09
申请号：US13502015
申请日：2010-07-27
CPC分类号： C01B33/035 , Y10T29/53796 , Y10T29/53961
摘要： One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
摘要翻译： 芯线保持架20的一端形成为截头圆锥形，具有倾斜面。 在端部设有开口部22，形成中空部21，插入中空部21并保持在其中的硅芯线5。 在硅芯线5的表面上，通过西门子方法气相沉积多晶硅6以制造多晶硅棒。 在开口部22附近的截锥体的倾斜面上，作为绝热层，从开口部的朝向中空部21的外周面形成环状狭缝23a〜23c。环状狭缝 用作绝热部分，并且抑制热量逸出以加热芯线保持器20的一端侧。
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.019 秒)
