摘要:
The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.
摘要:
The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.
摘要:
One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
摘要:
One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
摘要:
An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
摘要:
The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.
摘要:
An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
摘要:
The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.
摘要:
The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).
摘要:
The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).